Compound semiconductor material and method for forming an active layer of a thin film transistor device

• US 20080296569A1
• Filed: 04/28/2008
• Published: 12/04/2008
• Est. Priority Date: 09/18/2003
• Status: Abandoned Application

• Current Assignee: Industrial Technology Research Institute
• Original Assignee: Industrial Technology Research Institute
• Inventors: Ho, Jia-Chong, Lee, Cheng-Chung, Lin, Pang, Lee, Chun-Tao, Lee, Jen-Hao, Wang, Yu-Wu
• Application Number:
  US12/149,113
• Publication Number:
  US 20080296569A1
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A compound semiconductor material for forming an active layer of a thin film transistor device is disclosed, which has a group II-VI compound doped with a dopant ranging from 0.1 to 30 mol %, wherein the dopant is selected from a group consisting of alkaline-earth metals, group IIIA elements, group IVA elements, group VA elements, group VIA elements, and transitional metals. The method for forming an active layer of a thin film transistor device by using the compound semiconductor material of the present invention is disclosed therewith.

Claims

1-15. -15. (canceled)

16. A thin film transistor device comprising:

a substrate;

a gate electrode deposited on the substrate;

a dielectric layer deposited on the gate electrode;

a source electrode and a drain electrode deposited on the dielectric layer; and

an active layer deposited on the gate electrode and source electrode, wherein the active layer comprises a group II-VI compound doped with a dopant ranging from 0.1 to 30 mol % and wherein the dopant is selected from a group consisting of at least one of alkaline-earth metals, group IIIA elements, group IVA elements, group VA elements, group VIA elements, and transitional metals.

17. The thin film transistor device of claim 16, wherein the group II-VI compound is ZnO, ZnS, ZnSe, CdSe, CdS, HgS, MnS, SnS, PbS, CoS, NiS, or CdTe.

18. The thin film transistor device of claim 16, wherein the alkaline-earth metal is Mg, Ca, Sr, or Ba;

the transitional metal is Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, La, Hf, Ta, W, Re, Os, Ir, Pt, or Au;

the group IIIA element is B, Al, Ga, In, or Tl;

the group IVA element is Si, Ge, Sn, or Pb;

the group VA element is N, P, As, Sb, or Bi; and

the group VIA element is S, Se, Te, or Po.

19. The thin film transistor device of claim 17, wherein the alkaline-earth metal is Mg, Ca, Sr, or Ba;

the transitional metal is Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, La, Hf, Ta, W, Re, Os, Ir, Pt, or Au;

the group IIIA element is B, Al, Ga, In, or Tl;

the group IVA element is Si, Ge, Sn, or Pb;

the group VA element is N, P, As, Sb, or Bi; and

the group VIA element is S, Se, Te, or Po. The thin film transistor device of claim

20. The thin film transistor device of claim 16, wherein the active layer is a ZnO compound doped with a Mg compound.

21. The thin film transistor device of claim 20, wherein the Mg ZnO compound has a grain size of about 20 nm.

22. The thin film transistor device of claim 17 wherein the ZnO is doped with Al or Zr.

23. The thin film transistor device as claimed in claim 16, wherein a precursor solution containing components of the active layer is prepared by Chemical Bath Deposition, Photochemical Deposition, or Sol-gel process to produce the active layer.