METHOD USING LOW TEMPERATURE WAFER BONDING TO FABRICATE TRANSISTORS WITH HETEROJUNCTIONS OF Si(Ge) TO III-N MATERIALS
First Claim
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1. A method for fabricating an electronic device, comprising:
- wafer bonding a first semiconductor material to a second semiconductor material, at a temperature below 550°
C., to form a device quality heterojunction between the first semiconductor material and the second semiconductor material, wherein the second semiconductor material is a III-nitride and the first semiconductor material has a different material composition from the second semiconductor material.
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Abstract
A method for fabricating an electronic device, comprising wafer bonding a first semiconductor material to a III-nitride semiconductor, at a temperature below 550° C., to form a device quality heterojunction between the first semiconductor material and the III-nitride semiconductor, wherein the first semiconductor material is different from the III-nitride semiconductor and is selected for superior properties, or preferred integration or fabrication characteristics in the injector region as compared to the III-nitride semiconductor.
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Citations
20 Claims
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1. A method for fabricating an electronic device, comprising:
wafer bonding a first semiconductor material to a second semiconductor material, at a temperature below 550°
C., to form a device quality heterojunction between the first semiconductor material and the second semiconductor material, wherein the second semiconductor material is a III-nitride and the first semiconductor material has a different material composition from the second semiconductor material.- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. An electronic device, comprising:
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a semiconductor material including one or more injector regions; a III-nitride material including one or more collector, drain or active regions; and a device quality heterojunction formed between the semiconductor material and the III-nitride, wherein the semiconductor material is not a III-nitride, the injector regions have one or more superior properties as compared to III-nitride injector regions, and the superior properties include higher speed of the injector region, higher electron mobility, lower access resistance, or a combination thereof. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. An electronic device fabricated using a process comprising:
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(a) wafer bonding a first semiconductor material to a second semiconductor material at a temperature below 550°
C. to form a device quality heterojunction between the first semiconductor material and the second semiconductor material;(b) wherein the first semiconductor material includes one or more injector regions, and the second semiconductor material includes one or more active regions, and (c) wherein the second semiconductor material comprises a III-nitride semiconductor, the first semiconductor material is different from the second semiconductor material, and the first semiconductor material is selected for superior properties in the injector region as compared to the second semiconductor material. - View Dependent Claims (20)
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Specification