SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

• US 20080296729A1
• Filed: 05/30/2008
• Published: 12/04/2008
• Est. Priority Date: 05/30/2007
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: NEC Electronics Corporation (Renesas Electronics Corporation)
• Inventors: Kura, Satoshi, KUBOTA, Ryo, Nagai, Nobutaka
• Granted Patent: US 7,985,997 B2
• Time in Patent Office: Days
• US Class Current: 257/532
• CPC Class Codes: H01L 28/91 made by depositing layers, e.g. by depositing alternating conductive and insulating layers

Abstract

A semiconductor device is manufactured by forming a hole as being extended through a first insulating film and an insulating interlayer stacked over a semiconductor substrate, allowing side-etching of the inner wall of the hole to proceed specifically in a portion of the insulating interlayer, to thereby form a structure having the first insulating film projected out from the edge towards the center of the hole; forming a lower electrode film as being extended over the top surface, side face and back surface of the first insulating film, and over the inner wall and bottom surface of the hole; filling a protective film in the hole; removing the lower electrode film specifically in portions fallen on the top surface and side face of the first insulating film; removing the protective film; and forming a cylindrical capacitor in the hole.

Claims

1. A method of manufacturing a semiconductor device comprising:

stacking, over a semiconductor substrate, an insulating interlayer and a first insulating film in this order;

selectively removing said first insulating film and said insulating interlayer in this order, to thereby form a hole as being extended through said first insulating film and said insulating interlayer;

allowing side-etching of the inner wall of said hole to proceed specifically in a portion of said insulating interlayer, to thereby form a structure having said first insulating film projected out from the edge towards the center of said hole;

forming a lower electrode film as being extended over the top surface, side face and back surface of said first insulating film, and over the inner wall and bottom surface of said hole;

filling a protective film in said hole;

removing said lower electrode film specifically in portions fallen on the top surface and side face of said first insulating film;

removing said protective film; and

stacking, in said hole and over said lower electrode film, a capacitor insulating film and an upper electrode in this order.

2. The method of manufacturing a semiconductor device as claimed in claim 1, further comprising;

after said removing said lower electrode film specifically in portions fallen on the top surface and side face of said first insulating film,

removing said first insulating film.

3. The method of manufacturing a semiconductor device as claimed in claim 1, further comprising;

before stacking the insulating interlayer and the first insulating film in this order over said semiconductor substrate,

stacking, between said semiconductor substrate and said insulating interlayer, a second insulating film and a third insulating film in this order; and

selectively removing said third insulating film and second insulating film in this order, to thereby form a contact hole as being extended through said second insulating film and said third insulating film, and then forming, in said contact hole, a contact connected to said lower electrode film,

wherein in said forming said hole, said hole is formed using said third insulating film as an etching stopper film.

4. A semiconductor device comprising:

a semiconductor substrate;

an insulating interlayer formed over said semiconductor substrate;

a first insulating film formed over said insulating interlayer; and

a cylindrical capacitor filled in a hole formed as being extended through said insulating interlayer and said first insulating film,

wherein said first insulating film is configured as being projected out from the edge towards the center of said hole,

said cylindrical capacitor is configured as having a lower electrode film, a capacitor insulating film and an upper electrode stacked in this order, and

the top surface of said lower electrode film is covered by the projected portion of said first insulating film at the upper portion of said hole.

5. The semiconductor device as claimed in claim 4, wherein said insulating interlayer is a silicon oxide film.

6. The semiconductor device as claimed in claim 4,

wherein said first insulating film is a nitride film.

7. The semiconductor device as claimed in claim 4,

configured as further having a second insulating film and a third insulating film stacked in this order between said semiconductor substrate and said insulating interlayer, and

said second insulating film and third insulating film have a contact formed therein connected to said lower electrode film.