Copper nucleation in interconnects having ruthenium layers
First Claim
1. A method comprising:
- depositing a barrier layer on a substrate having a trench;
depositing a ruthenium layer on the barrier layer;
depositing an alloy-seed layer on the ruthenium layer;
using an electroless plating process to deposit a copper seed layer on the alloy-seed layer; and
using an electroplating process to deposit a bulk metal layer on the copper seed layer.
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Abstract
A method for fabrication a metal interconnect that includes a ruthenium layer and minimizes void formation comprises forming a barrier layer on a substrate having a trench, depositing a ruthenium layer on the barrier layer, depositing an alloy-seed layer on the ruthenium layer, using an electroless plating process to deposit a copper seed layer on the alloy-seed layer, and using an electroplating process to deposit a bulk metal layer on the copper seed layer. The alloy-seed layer inhibits void formation issues at the ruthenium-copper interface and improves electromigration issues. The electroless copper seed layer inhibits the alloy-seed layer from dissolving into the electroplating bath and reduces electrical resistance across the substrate during the electroplating process.
76 Citations
19 Claims
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1. A method comprising:
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depositing a barrier layer on a substrate having a trench; depositing a ruthenium layer on the barrier layer; depositing an alloy-seed layer on the ruthenium layer; using an electroless plating process to deposit a copper seed layer on the alloy-seed layer; and using an electroplating process to deposit a bulk metal layer on the copper seed layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. An apparatus comprising:
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a dielectric layer having a trench that is formed on a substrate; a barrier layer formed on the dielectric layer within the trench; a ruthenium layer formed in the barrier layer within the trench; an alloy-seed layer formed on the ruthenium layer within the trench; an EL copper seed layer formed on the alloy-seed layer within the trench; and an EP bulk copper layer formed on the EL copper seed layer within the trench. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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Specification