Radio Frequency Device with Magnetic Element, Method for Making Such a Magnetic Element

• US 20080297292A1
• Filed: 07/19/2006
• Published: 12/04/2008
• Est. Priority Date: 07/21/2005
• Status: Abandoned Application

• Current Assignee: Commissariat a L'Energie Atomique (AES Corporation), STMicroelectronics SA (STMicroelectronics NV)
• Original Assignee: Commissariat a L'Energie Atomique (AES Corporation), STMicroelectronics SA (STMicroelectronics NV)
• Inventors: Viala, Bernard, Ancey, Pascal, Couderc, Sandrine
• Application Number:
  US11/996,332
• Publication Number:
  US 20080297292A1
• Time in Patent Office: Days
• US Class Current: 335/296
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: H01F 10/007 ultrathin or granular films H01F10/005 and H01F10/3227 take precedence; applying ultrathin or granular layers to substrates H01F41/301
• CPC Class Codes: H01F 10/147 with lattice under strain, e.g. expanded by interstitial nitrogen H01F10/26 - H01F10/30 take precedence
• CPC Class Codes: H01F 10/16 containing cobalt H01F10/126 , H01F10/13 take precedence
• CPC Class Codes: H01F 2017/0066 with a magnetic layer
• CPC Class Codes: H01F 41/18 by cathode sputtering
• CPC Class Codes: H01F 41/205 by laser ablation, e.g. pulsed laser deposition [PLD]
• CPC Class Codes: H01P 1/215 using ferromagnetic material

Abstract

A radiofrequency device may include an electrically conducting element associated with at least one continuous magnetic element. The first continuous magnetic element may include a substrate coated with a magnetic film having a granular structure, with grains that are inclined to the normal to the substrate, or a columnar texture inclined to the normal of the substrate.

Claims

1-19. -19. (canceled)

20. A radio frequency device comprising:

an electrically conducting element; and

a first continuous magnetic element associated with said electrically conducting element and comprising

a substrate, and

a magnetic film coating said substrate and comprising grains inclined to a normal of said substrate.

21. The radio frequency device according to claim 20, wherein said magnetic film comprises at least one of Fe, Co, and Ni.

22. The radio frequency device according to claim 20 wherein said magnetic film comprises at least one of an FeCoXN, FeCoXO, FeCoXNO, FeXN, FeXO, and FeXNO alloy;

and wherein X comprises one of Zr, Nb, Mo, Ru, Rh, Pd, Hf, Ta, W, Ir, Pt, Al, Si, Ti, V, Cr, Mn, Cu, and the Lanthanides.

23. The radio frequency device according to claim 21, wherein said magnetic film comprises an FeHfNO alloy.

24. The radio frequency device according to claim 20, wherein said grains have an angle of inclination associated therewith;

and wherein said angle of inclination is in a range between about 20° and

80°

.

25. The radio frequency device according to claim 20, wherein said first continuous magnetic element is positioned on top of or underneath said electrically conducting element.

26. The radio frequency device according to claim 20 further comprising:

a second continuous magnetic element associated with said electrically conducting element and comprising

a substrate, and

a magnetic film coating said substrate and comprising grains inclined to a normal of said substrate;

said electrically conducting element being positioned between said first and second continuous magnetic elements.

27. The radio frequency device according to claim 26, wherein said second continuous magnetic element is identical to said first continuous magnetic element.

28. The radio frequency device according to claim 20, wherein said electrically conducting element comprises a spiral element.

29. The radio frequency device according to claim 20, wherein said electrically conducting element comprises one of a coplanar line and microstrip.

30. The radio frequency device according to claim 20, wherein said electrically conducting element comprises a solenoid winding surrounding the first continuous magnetic element.

31. A radio frequency device comprising:

an electrically conducting element;

a pair of magnetic elements adjacent opposite sides of said electrically conducting element, each comprising

a substrate, and

a magnetic film coating said substrate and comprising grains inclined to a normal of said substrate.

32. The radio frequency device according to claim 31, wherein said magnetic film comprises at least one of Fe, Co, and Ni.

33. The radio frequency device according to claim 31 wherein said magnetic film comprises at least one of an FeCoXN, FeCoXO, FeCoXNO, FeXN, FeXO, and FeXNO alloy;

and wherein X comprises one of Zr, Nb, Mo, Ru, Rh, Pd, Hf, Ta, W, Ir, Pt, Al, Si, Ti, V, Cr, Mn, Cu, and the Lanthanides.

34. The radio frequency device according to claim 31, wherein said grains have an angle of inclination associated therewith;

and wherein said angle of inclination is in a range between about 20° and

80°

.

35. A method of making a radio frequency device comprising:

performing a physical vapor deposition of a magnetic film onto an inclined substrate to form a continuous magnetic element so that the magnetic film comprises grains inclined to a normal of the substrate; and

associating an electrically conducting element with the continuous magnetic element to thereby form the radio frequency device.

36. The method according to claim 35, wherein performing the physical vapor deposition is performed by at least one of cathode sputtering and evaporation.

37. The method according to claim 35, wherein performing the physical vapor deposition is performed by oblique ion-beam sputtering onto the inclined substrate.

38. The method according to claim 37, wherein the oblique ion-beam sputtering is performed by an ion source and a sputtering target;

and wherein the ion source and sputtering target are pivotable about an axis.

39. The method according to claim 35 wherein performing the physical vapor deposition is performed by a laser and sputtering target;

and wherein the laser and sputtering target are pivotable about an axis.

40. The method according to claim 35, wherein the inclined substrate is subjected to a magnetic field applied in a plane of the inclined substrate and whose direction is orthogonal to a pivot axis.

41. The method according to claim 40, wherein the inclined substrate is pivotable about the pivot axis;

and wherein a magnetic field is applied in the plane of the inclined substrate with a direction orthogonal to the pivot axis.

42. The method according to claim 35, wherein performing the physical vapor deposition is performed by at least one of a CoFeX and FeX alloy target in the presence of at least one of nitrogen and oxygen.