PLASMA CVD APPARATUS HAVING NON-METAL SUSCEPTOR

• US 20080299326A1
• Filed: 05/30/2007
• Published: 12/04/2008
• Est. Priority Date: 05/30/2007
• Status: Abandoned Application

• Current Assignee: ASM Japan K.K. (ASM International NV)
• Original Assignee: ASM Japan K.K. (ASM International NV)
• Inventors: Matsuki, Nobuo, Fukazawa, Atsuki, Shimizu, Mikio, Jin, Lee Woo
• Application Number:
  US11/755,491
• Publication Number:
  US 20080299326A1
• Time in Patent Office: Days
• US Class Current: 427/569
• CPC Class Codes: C23C 16/458 characterised by the method used for supporting substrates in the reaction chamber
• CPC Class Codes: C23C 16/46 characterised by the method used for heating the substrate C23C16/48, C23C16/50 take precedence
• CPC Class Codes: C23C 16/463 Cooling of the substrate
• CPC Class Codes: C23C 16/509 using internal electrodes

Abstract

A plasma CVD apparatus includes: a cooling susceptor for placing a substrate thereon and serving as an electrode; and a shower plate for introducing gas toward the susceptor via multiple throughholes formed therein. The shower plate serves as an electrode and is disposed in parallel to the susceptor. The cooling susceptor is made of a ceramic material provided with a cooling fluid flow path for passing a cooling fluid therethrough.

Claims

1. A plasma CVD apparatus comprising:

a cooling susceptor for placing thereon and contacting a substrate and serving as an electrode, said cooling susceptor being made of a ceramic material provided with a cooling fluid flow path for passing a cooling fluid therethrough; and

a shower plate for introducing gas toward the susceptor via multiple throughholes formed therein, said shower plate serving as an electrode and being disposed in parallel to the susceptor.

2. The plasma CVD apparatus according to claim 1, wherein the susceptor is provided further with an RF plate embedded in the susceptor.

3. The plasma CVD apparatus according to claim 1, wherein the shower plate is made of a ceramic material.

4. The plasma CVD apparatus according to claim 1, wherein the cooling fluid flow path is provided at a bottom of the susceptor.

5. The plasma CVD apparatus according to claim 1, wherein the ceramic material constituting the susceptor is AlN or Al₂O₃.

6. The plasma CVD apparatus according to claim 3, wherein the ceramic material constituting the shower plate is AlN or Al₂O₃.

7. The plasma CVD apparatus according to claim 1, wherein the shower plate has a center area which is convex.

8. The plasma CVD apparatus according to claim 1, wherein the susceptor has a center area which is concave.

9. The plasma CVD apparatus according to claim 1, further comprising a cooling fluid circulation device having a cooling fluid outlet and a cooling fluid inlet, both of which are connected to the cooling fluid flow path of the susceptor.

10. The plasma CVD apparatus according to claim 9, wherein the cooling fluid circulation device further comprises a cooling fluid which is an aqueous solution having 10-40% ethylene glycol.

11. The plasma CVD apparatus according to claim 1, wherein the susceptor includes lift pins each having a surface which is exposed from the surface of the susceptor, wherein at least the surface is made of a ceramic material.

12. The plasma CVD apparatus according to claim 1, further comprising a reaction chamber having an aluminum inner wall, in which the susceptor and the shower plate are provided in parallel.

13. A method of depositing a thin film on a substrate by plasma CVD, comprising:

providing the plasma CVD apparatus of claim 1 in a reaction chamber;

controlling the susceptor at a temperature of −

50°

C. to 20°

C.;

placing a substrate on the surface of the susceptor;

introducing gas into the reaction chamber through the shower plate and applying RF power to the shower plate;

depositing a thin film on the substrate.

14. The method according to claim 13, wherein the cooling fluid flow path is provided at a bottom of the susceptor.

15. The method according to claim 14, wherein the step of controlling the susceptor temperature comprises circulating a cooling fluid through the cooling fluid flow path.

16. The method according to claim 15, wherein the cooling fluid is an aqueous solution having 10-40% ethylene glycol.