Silicon film dry etching method

• US 20080299778A1
• Filed: 05/28/2008
• Published: 12/04/2008
• Est. Priority Date: 05/30/2007
• Status: Abandoned Application

• Current Assignee: Casio Computer Company Limited
• Original Assignee: Casio Computer Company Limited
• Inventors: Tosaka, Hisao
• Application Number:
  US12/154,947
• Publication Number:
  US 20080299778A1
• Time in Patent Office: Days
• US Class Current: 438/724
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31144 using masks
• CPC Class Codes: H01L 21/32135 by vapour etching only
• CPC Class Codes: H01L 21/32139 using masks

Abstract

A silicon film is dry etched by parallel plate type dry etching using a mixed gas including a fluorine gas and a chlorine gas.

Claims

1. A silicon film dry etching method comprising subjecting a silicon film to dry etching by parallel plate type dry etching using a mixed gas including a fluorine gas and a chlorine gas.

2. The silicon film dry etching method according to claim 1, wherein the dry etching is dry etching by cathode coupling.

3. The silicon film dry etching method according to claim 1, wherein the dry etching is dry etching by anode coupling.

4. The silicon film dry etching method according to claim 1, wherein the silicon film is formed on a silicon nitride film.

5. The silicon film dry etching method according to claim 1, wherein the mixed gas further includes an inert gas.

6. The silicon film dry etching method according to claim 1, wherein the ratio of the flow volume of the chlorine gas to that of the fluorine gas is 1 to 10.

7. The silicon film dry etching method according to claim 1, wherein the ratio of the flow volume of the chlorine gas to that of the fluorine gas is 1 to 20.

8. The silicon film dry etching method according to claim 1, wherein the dry etching is performed under a vacuum atmosphere at 1 to 100 Pa.

9. A silicon film dry etching method comprising:

preparing a processing target material in which a silicon film is formed on one side of a substrate;

carrying the processing target material into a reaction chamber of a parallel plate type dry etching apparatus in which a high-frequency electrode and an opposite electrode are arranged in parallel with each other, and mounting the substrate of the processing target material on the high-frequency electrode or on the opposite electrode;

reducing the pressure in the reaction chamber, and introducing a fluorine gas and a chlorine gas into the reaction chamber; and

applying high-frequency waves to the high-frequency electrode for etching the silicon film.

10. The silicon film dry etching method according to claim 9, wherein preparing the processing target material includes preparing a processing target material in which a silicon nitride film is formed on the substrate and the silicon film is formed on the silicon nitride film.

11. The silicon film dry etching method according to claim 9, wherein the etching is dry etching by cathode coupling.

12. The silicon film dry etching method according to claim 9, wherein the etching is dry etching by anode coupling.

13. The silicon film dry etching method according to claim 9, wherein the fluorine gas is used after diluted with an inert gas.

14. The silicon film dry etching method according to claim 9, wherein the ratio of the flow volume of the chlorine gas to that of the fluorine gas is 1 to 10.

15. The silicon film dry etching method according to claim 9, wherein the ratio of the flow volume of the chlorine gas to that of the fluorine gas is 1 to 20.

16. The silicon film dry etching method according to claim 9, wherein the dry etching is performed under a vacuum atmosphere at 1 to 100 Pa.

17. A silicon film dry etching method comprising subjecting a silicon film to dry etching by parallel plate type dry etching using a mixed gas essentially consisting of a fluorine gas and a chlorine gas or a mixed gas essentially consisting of a fluorine gas, a chlorine gas and an inert gas.