PLASMA PROCESSING SYSTEM AND USE THEREOF

• US 20080302761A1
• Filed: 06/11/2008
• Published: 12/11/2008
• Est. Priority Date: 06/11/2007
• Status: Abandoned Application

• Current Assignee: Tohoku University National Universities Corporation, Tokyo Electron Limited
• Original Assignee: Tohoku University National Universities Corporation, Tokyo Electron Limited
• Inventors: Ohmi, Tadahiro, Hirayama, Masaki
• Application Number:
  US12/137,088
• Publication Number:
  US 20080302761A1
• Time in Patent Office: Days
• US Class Current: 216/67
• CPC Class Codes: C03C 17/002 for flat glass, e.g. float glass
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: C23C 16/511 using microwave discharges
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32238 Windows
• CPC Class Codes: H05H 1/46 using applied electromagnetic fields, e.g. high frequency or microwave energy H05H1/26 takes precedence

Abstract

A plasma processing system 10 includes a processing chamber 100, a microwave source 700 that outputs a microwave, a coaxial waveguide 315 that transfers the microwave from the microwave source, a plurality of dielectric plates 305 that transmit the microwave transferred through the coaxial waveguide 315 and discharge the microwave into the processing chamber 100, and a metal electrode 310 having a first end and a second end, the first end coupled to the coaxial waveguide 315, the second end disposed on the surface of the dielectric plate 305 facing the substrate. The coaxial waveguide 315 holds the dielectric plate 305 and metal electrode 310 and is securely fastened by a fastening mechanism 500. The coaxial waveguide 315 is given a force by the spring member 515, the force being directed away from the processing chamber 100.

Claims

1. A plasma processing system that excites a gas using an electromagnetic wave and applies a plasma process to a target object, the system comprising:

a processing chamber;

an electromagnetic source that outputs an electromagnetic wave;

a dielectric plate on the inner wall of the processing chamber, the dielectric plate transmitting the electromagnetic wave into the processing chamber;

a conductor rod adjacent to the dielectric plate, the conductor rod transferring the electromagnetic wave to the dielectric plate;

a metal electrode coupled to the conductor rod to hold the dielectric plate; and

a device to give the conductor rod a force directed away from the processing chamber.

2. The plasma processing system according to claim 1, wherein

the device to give the conductor rod a force directed away from the processing chamber is a spring member.

3. The plasma processing system according to claim 2, wherein

the spring member includes a first spring member provided outside a lid portion of the processing chamber.

4. The plasma processing system according to claim 3, wherein

the first spring member is either a coiled spring member or a plate spring member.

5. The plasma processing system according to claim 3, wherein

the first spring member is either a metal spring or a ceramic spring.

6. The plasma processing system according to claim 2, further comprising a first dielectric member between a lid portion of the processing chamber and the conductor rod, wherein

the spring member includes a second spring member between the first dielectric member and the lid portion of the processing chamber, the second spring member being provided on the surface facing the dielectric plate.

7. The plasma processing system according to claim 6, wherein

the second spring member is either an O-ring, a C-ring, a metal spring, or a ceramic spring.

8. The plasma processing system according to claim 6, wherein

the first dielectric member is formed as a ring, has the conductor rod passing therethrough, and is partially embedded in the lid portion of the processing chamber.

9. The plasma processing system according to claim 6, further comprising a buffer member provided between the first dielectric member and the conductor rod and also on a surface facing outside the processing chamber.

10. The plasma processing system according to claim 9, wherein

the buffer member is made of Teflon (registered trademark).

11. The plasma processing system according to claim 6 further comprising a first sealing member between the first dielectric member and the conductor rod for sealing between the first dielectric member and the conductor rod.

12. The plasma processing system according to claim 11, wherein

the second spring member and the first sealing member are each either an O-ring or an C-ring.

13. The plasma processing system according to claim 1, further comprising:

a second dielectric member of a ring shape through which the conductor rod passes;

a second sealing member for sealing between the second dielectric member and the lid portion of the processing chamber; and

a third sealing member for sealing between the second dielectric member and the conductor rod or the metal electrode.

14. The plasma processing system according to claim 13, wherein

the second sealing member and the third sealing member are each either an O-ring or a C-ring.

15. The plasma processing system according to claim 13, wherein

a space between the first dielectric member and the second dielectric member is maintained at a predetermined degree of vacuum.

16. The plasma processing system according to claim 13, wherein

an inert gas is filled in a space between the first dielectric member and the second dielectric member.

17. The plasma processing system according to claim 13, wherein

the first dielectric member and the second dielectric member are each made of either quartz or alumina.

18. The plasma processing system according to claim 1, further comprising an engaging portion between the dielectric plate and a lid portion of the processing chamber, the engaging portion being for engaging the dielectric plate and the lid portion of the processing chamber.

19. The plasma processing system according to claim 18, wherein

the engaging portion includes a convex member fastened to an inner wall of the processing chamber, the convex member being adjacent to a peripheral surface of the dielectric plate.

20. The plasma processing system according to claim 1, wherein

the processing chamber and the conductor rod are each made of metal, and

the system further comprises a shorting portion at a portion through which the conductor rod passes through a lid portion of the processing chamber, the shorting portion being for short-circuiting the conductor rod and the lid portion.

21. The plasma processing system according to claim 2, wherein

the lid portion and the conductor rod are each made of metal,

the system comprises a shorting portion for short-circuiting the conductor rod and the lid portion, and

the spring member includes a first spring member outside the shorting portion.

22. The plasma processing system according to claim 20, wherein

the conductor rod engages with the shorting portion to be able to slide with respect to the lid portion of the processing chamber.

23. The plasma processing system according to claim 20, wherein

the shorting portion is either a metal coil or a metal brush.

24. The plasma processing system according to claim 1, wherein

during the process, the side of the dielectric plate is in contact with the plasma.

25. The plasma processing system according to claim 1, wherein

the conductor rod contains a cooling mechanism for cooling the conductor rod.

26. The plasma processing system according to claim 1, wherein

the dielectric plate, the conductor rod, and the metal electrode are each provided in a plurality, and

each conductor rod is coupled to one of the metal electrodes via a hole formed at a substantially center of one of the dielectric plates.

27. The plasma processing system according to claim 1, wherein

the electromagnetic source outputs an electromagnetic wave at a frequency of 1 GHz or less.

28. The plasma processing system according to claim 1, wherein

the conductor rod is made of copper.

29. The plasma processing system according to claim 1, wherein

the dielectric plate is made of alumina.

30. A method of using a plasma processing system, the method comprising:

outputting an electromagnetic wave at a frequency of 1 GHz or less from an electromagnetic source;

transferring the electromagnetic wave to a conductor rod, the conductor rod being raised by a device to give the conductor rod a force directed away from a processing chamber, the conductor rod being coupled to a metal electrode to hold a dielectric plate;

transferring the electromagnetic wave transferred through the conductor rod to the dielectric plate adjacent to the conductor rod; and

exciting a process gas using the electromagnetic wave transmitted by the dielectric plate and introduced into the processing chamber and applying a desired plasma processing to a target object.

31. A method of cleaning a plasma processing system, the method comprising:

outputting an electromagnetic wave at a frequency of 1 GHz or less from an electromagnetic source;

transferring the electromagnetic wave to a conductor rod raised by a device to give the conductor rod a force directed away from a processing chamber, the conductor rod being coupled to a metal electrode to hold a dielectric plate;

transferring the electromagnetic wave transferred through the conductor rod to the dielectric plate adjacent to the conductor rod; and

exciting a cleaning gas using the electromagnetic wave transmitted by the dielectric plate and introduced into the processing chamber and cleaning the plasma processing system.