THIN-FILM TRANSISTOR ARRAY SUBSTRATE FOR X-RAY DETECTOR AND X-RAY DETECTOR HAVING THE SAME
First Claim
1. A thin-film transistor array substrate for an X-ray detector, the TFT array substrate comprising:
- a gate wiring formed on an insulating substrate, and comprising a gate line and a gate electrode electrically connected to the gate line;
a gate insulating layer which covers the gate wiring;
an active layer formed on the gate insulating layer to overlap with the gate electrode;
a data wiring formed on the gate insulating layer, and comprising a data line, a source electrode and a drain electrode, the data line crossing the gate line, the source electrode being electrically connected to the data line and extending to an upper portion of the active layer, and the drain electrode being spaced apart from the source electrode on the active layer;
a photodiode formed in a pixel area, and comprising a lower electrode electrically connected to the drain electrode, a photoconductive layer formed on the lower electrode, which generates electrons and holes using externally provided light, and an upper electrode formed on the photoconductive layer;
an organic insulating layer which covers the data wiring and the photodiode, and comprises a contact hole; and
a bias wiring formed on the organic insulating layer and electrically connected to the upper electrode through the contact hole formed through the organic insulating layer.
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Accused Products
Abstract
In a thin-film transistor (“TFT”) array substrate for an X-ray detector and an X-ray detector having the TFT array substrate, the TFT array substrate includes a gate wiring, a gate insulating layer, an active layer, a data wiring, a photodiode, an organic insulating layer and a bias wiring. The gate wiring is formed on an insulating substrate and includes a gate line and a gate electrode. The gate insulating layer covers the gate wiring. The active layer is formed on the gate insulating layer. The data wiring is formed on the gate insulating layer and includes a data line, source and drain electrodes. The photodiode includes lower and upper electrodes, and a photoconductive layer. The organic insulating layer covers the data wiring and the photodiode. The bias wiring is formed on the organic insulating layer. Thus, an aperture ratio and reliability are enhanced.
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Citations
17 Claims
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1. A thin-film transistor array substrate for an X-ray detector, the TFT array substrate comprising:
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a gate wiring formed on an insulating substrate, and comprising a gate line and a gate electrode electrically connected to the gate line; a gate insulating layer which covers the gate wiring; an active layer formed on the gate insulating layer to overlap with the gate electrode; a data wiring formed on the gate insulating layer, and comprising a data line, a source electrode and a drain electrode, the data line crossing the gate line, the source electrode being electrically connected to the data line and extending to an upper portion of the active layer, and the drain electrode being spaced apart from the source electrode on the active layer; a photodiode formed in a pixel area, and comprising a lower electrode electrically connected to the drain electrode, a photoconductive layer formed on the lower electrode, which generates electrons and holes using externally provided light, and an upper electrode formed on the photoconductive layer; an organic insulating layer which covers the data wiring and the photodiode, and comprises a contact hole; and a bias wiring formed on the organic insulating layer and electrically connected to the upper electrode through the contact hole formed through the organic insulating layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. An X-ray detector comprising:
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a thin-film transistor array substrate comprising; a gate wiring formed on an insulating substrate, and comprising a gate line and a gate electrode electrically connected to the gate line; a gate insulating layer which covers the gate wiring; an active layer formed on the gate insulating layer to overlap with the gate electrode; a data wiring formed on the gate insulating layer, and comprising a data line, a source electrode and a drain electrode, the data line crossing the gate line, the source electrode being electrically connected to the data line and extending to an upper portion of the active layer, and the drain electrode being spaced apart from the source electrode on the active layer; a photodiode formed in a pixel area, and comprising a lower electrode electrically connected to the drain electrode, a photoconductive layer formed on the lower electrode, which generates electrons and holes using externally provided light and an upper electrode formed on the photoconductive layer; an organic insulating layer which covers the data wiring and the photodiode and comprising a contact hole; and a bias wiring formed on the organic insulating layer and electrically connected to the upper electrode through the contact hole formed through the organic insulating layer; and an X-ray generator which generates an X-ray and irradiates the X-ray onto the TFT array substrate.
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Specification