THIN-FILM TRANSISTOR ARRAY SUBSTRATE FOR X-RAY DETECTOR AND X-RAY DETECTOR HAVING THE SAME

• US 20080302969A1
• Filed: 06/10/2008
• Published: 12/11/2008
• Est. Priority Date: 06/11/2007
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: JUNG, Kwan-Wook, CHOO, Dae-Ho
• Granted Patent: US 7,767,974 B2
• Time in Patent Office: Days
• US Class Current: 250/370.09
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/14663 Indirect radiation imagers, e.g. using luminescent members

Abstract

In a thin-film transistor (“TFT”) array substrate for an X-ray detector and an X-ray detector having the TFT array substrate, the TFT array substrate includes a gate wiring, a gate insulating layer, an active layer, a data wiring, a photodiode, an organic insulating layer and a bias wiring. The gate wiring is formed on an insulating substrate and includes a gate line and a gate electrode. The gate insulating layer covers the gate wiring. The active layer is formed on the gate insulating layer. The data wiring is formed on the gate insulating layer and includes a data line, source and drain electrodes. The photodiode includes lower and upper electrodes, and a photoconductive layer. The organic insulating layer covers the data wiring and the photodiode. The bias wiring is formed on the organic insulating layer. Thus, an aperture ratio and reliability are enhanced.

Claims

1. A thin-film transistor array substrate for an X-ray detector, the TFT array substrate comprising:

a gate wiring formed on an insulating substrate, and comprising a gate line and a gate electrode electrically connected to the gate line;

a gate insulating layer which covers the gate wiring;

an active layer formed on the gate insulating layer to overlap with the gate electrode;

a data wiring formed on the gate insulating layer, and comprising a data line, a source electrode and a drain electrode, the data line crossing the gate line, the source electrode being electrically connected to the data line and extending to an upper portion of the active layer, and the drain electrode being spaced apart from the source electrode on the active layer;

a photodiode formed in a pixel area, and comprising a lower electrode electrically connected to the drain electrode, a photoconductive layer formed on the lower electrode, which generates electrons and holes using externally provided light, and an upper electrode formed on the photoconductive layer;

an organic insulating layer which covers the data wiring and the photodiode, and comprises a contact hole; and

a bias wiring formed on the organic insulating layer and electrically connected to the upper electrode through the contact hole formed through the organic insulating layer.

2. The thin-film transistor array substrate of claim 1, wherein the bias wiring extends parallel with the data line, and at least a portion of the bias wiring is close to the data line to overlap with the data line.

3. The thin-film transistor array substrate of claim 2, further comprising a passivation insulating layer formed beneath the organic insulating layer, which contacts the organic insulating layer.

4. The thin-film transistor array substrate of claim 3, further comprising an auxiliary bias wiring electrically connected to the bias wiring and substantially perpendicularly crossing the bias line.

5. The thin-film transistor array substrate of claim 4, wherein at least a portion of the auxiliary bias wiring overlaps with the gate line.

6. The thin-film transistor array substrate of claim 5, wherein the organic insulating layer comprises a thickness between approximately 2 μ

m and approximately 3 μ

m.

7. The thin-film transistor array substrate of claim 2, further comprising an auxiliary bias wiring electrically connected to the bias wiring and perpendicularly crossing the bias wiring, which prevents a malfunction of the thin-film transistor array substrate when the bias wiring becomes disconnected.

8. The thin-film transistor array substrate of claim 1, further comprising a passivation insulating layer formed beneath the organic insulating layer, which contacts the organic insulating layer.

9. The thin-film transistor array substrate of claim 8, wherein the organic insulating layer comprises a low dielectric constant and a thickness greater than approximately 2 μ

m on the passivation insulating layer.

10. The thin-film transistor array substrate of claim 9, wherein when the passivation insulating layer and the organic insulating layer are used, the organic insulating layer comprises a low dielectric constant which is equal to or lower than approximately 4.0 and comprises a thickness equal to or greater than approximately 2 μ

m.

11. The thin-film transistor array substrate of claim 8, wherein the contact hole is formed through the passivation insulating layer and the organic insulating layer, to partially expose the upper electrode.

12. The thin-film transistor array substrate of claim 1, wherein the data line extends in a first direction and the gate line extends in a second direction, and the bias wiring extends along the second direction and is formed on the organic insulating layer, such that the bias wiring contacts with the upper electrode through the contact hole, transmits a bias voltage to the upper electrode and controls the electrons and holes generated from the photoconductive layer.

13. The thin-film transistor array substrate of claim 8, further comprising an auxiliary bias wiring electrically connected to the bias wiring and perpendicularly crossing the bias wiring, which prevents a malfunction of the thin-film transistor array substrate when the bias wiring becomes disconnected.

14. The thin-film transistor array substrate of claim 13, wherein the auxiliary bias wiring overlaps with the gate line.

15. The thin-film transistor array substrate of claim 1, wherein the data wiring is connected to an end portion of the data line and further comprises a data pad which receives an externally provided image signal, and the data wiring is formed in the pixel area on the gate insulating layer.

16. The thin-film transistor array substrate of claim 1, wherein the photodiode is a positive-intrinsic-negative photodiode, and contacts the organic insulating layer.

17. An X-ray detector comprising:

a thin-film transistor array substrate comprising;

a gate wiring formed on an insulating substrate, and comprising a gate line and a gate electrode electrically connected to the gate line;

a gate insulating layer which covers the gate wiring;

an active layer formed on the gate insulating layer to overlap with the gate electrode;

a data wiring formed on the gate insulating layer, and comprising a data line, a source electrode and a drain electrode, the data line crossing the gate line, the source electrode being electrically connected to the data line and extending to an upper portion of the active layer, and the drain electrode being spaced apart from the source electrode on the active layer;

a photodiode formed in a pixel area, and comprising a lower electrode electrically connected to the drain electrode, a photoconductive layer formed on the lower electrode, which generates electrons and holes using externally provided light and an upper electrode formed on the photoconductive layer;

an organic insulating layer which covers the data wiring and the photodiode and comprising a contact hole; and

a bias wiring formed on the organic insulating layer and electrically connected to the upper electrode through the contact hole formed through the organic insulating layer; and

an X-ray generator which generates an X-ray and irradiates the X-ray onto the TFT array substrate.