Module Comprising Radiation-Emitting Semiconductor Bodies

• US 20080303038A1
• Filed: 02/10/2006
• Published: 12/11/2008
• Est. Priority Date: 02/28/2005
• Status: Active Grant

• Current Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Hahn, Berthold, Illek, Stefan, Grotsch, Stefan, Schnabel, Wolfgang
• Granted Patent: US 8,154,031 B2
• Time in Patent Office: Days
• US Class Current: 257/88
• CPC Class Codes: F21K 9/00 Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/0102 Calcium [Ca]
• CPC Class Codes: H01L 2924/01068 Erbium [Er]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A module comprising a regular arrangement of individual radiation-emitting semiconductor bodies (1) which are applied on a mounting area (6) of a carrier (2), wherein a wire connection is fitted between two adjacent radiation-emitting semiconductor bodies (1) on a top side, opposite to the mounting area (6), of the two radiation-emitting semiconductor bodies (1).

Claims

1. A module comprising:

a regular arrangement of individual radiation-emitting semiconductor bodies which are applied on a mounting area of a carrier; and

a wire connection fitted between two adjacent ones of said radiation-emitting semiconductor bodies on a top side, opposite to the mounting area, of said two radiation-emitting semiconductor bodies.

2. The module as claimed in claim 1, wherein the regular arrangement corresponds to a matrix composed of columns and rows.

3. The module as claimed in claim 2, wherein the matrix is a 3×

4, 4×

3 or 16×

9 matrix.

4. The module as claimed in claim 2, wherein the distance between two rows is less than or equal to 100 μ

m.

5. The module as claimed in claim 2, wherein the distance between two columns is less than or equal to 100 μ

m.

6. The module as claimed in claim 2, wherein the radiation-emitting semiconductor bodies are connected up in series within a column.

7. The module as claimed in claim 2, wherein the radiation-emitting semiconductor bodies of two adjacent columns are connected up in parallel in a row.

8. The module as claimed in claim 2, wherein the top side of a radiation-emitting semiconductor body has a layer of a first conduction type and the top side of a radiation-emitting semiconductor body that is adjacent in the column has a layer of a second conduction type.

9. The module as claimed in claim 8, wherein the carrier has a metallization on the mounting area.

10. The module as claimed in claim 9, wherein the metallization has one or a plurality of interruptions.

11. The module as claimed in claim 10, wherein the distance between two interruptions corresponds to double a distance between rows.

12. The module as claimed in claim 2, wherein each radiation-emitting semiconductor body has both a p-type contact-connection and an n-type contact-connection at the top side.

13. The module as claimed in claim 12, wherein the n-type contact-connection is applied on the top side of the layer sequence of the radiation-emitting semiconductor body, said layer sequence being arranged on a carrier element.

14. The module as claimed in claim 12, wherein the p-type contact-connection is applied on a mesa structure of the radiation-emitting semiconductor body.

15. The module as claimed in claim 12, wherein the carrier has a metallization on the mounting area.

16. The module as claimed in claim 1, wherein a plurality of bond pads are disposed laterally downstream of the arrangement of radiation-emitting semiconductor bodies.

17. The module as claimed in claim 16, wherein a portion of the radiation-emitting semiconductor bodies are connected to the bond pads by means of a wire connection.

18. The module as claimed in claim 1, wherein the radiation-emitting semiconductor bodies are thin-film semiconductor bodies.

19. The module as claimed in claim 18, wherein the radiation-emitting semiconductor body contains a semiconductor material such as InGaN or InGaAlP.

20. The module as claimed in claim 1, wherein the carrier, on which the radiation-emitting semiconductor bodies are mounted, contains an electrically insulating material.

21. The module as claimed in claim 20, wherein the carrier contains a ceramic material.

22. The module as claimed in claim 21, wherein the carrier contains AlN.

23. The module as claimed in claim 1, wherein the radiation-emitting semiconductor bodies are encapsulated by a molding compound.

24. (canceled)