Light-emitting diode device and manufacturing method therof
First Claim
1. A light-emitting diode device, comprising:
- a substrate;
a plurality of micro-lens formed on an upper surface of the substrate;
a reflector formed on a lower surface of the substrate;
a first conductivity type semiconductor layer formed on the substrate;
an active layer formed on a partial area of the first conductivity type semiconductor layer;
a second conductivity type semiconductor layer formed on the active layer;
a first electrode formed on the other partial area of the first conductivity type semiconductor layer uncovered by the active layer; and
a second electrode formed on the second conductivity type semiconductor layer.
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Accused Products
Abstract
A light-emitting diode (LED) device and manufacturing methods thereof are disclosed, wherein the LED device comprises a substrate, a plurality of micro-lens, a reflector, a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a first electrode and a second electrode. The substrate has a plurality of micro-lens on its upper surface. The first conductivity type semiconductor layer is on the upper surface of the substrate. The active layer and the second conductivity type semiconductor layer are sequentially on a portion of the first conductivity type semiconductor layer. The first electrode is on the other portion of the first conductivity type semiconductor layer uncovered by the active layer. The second electrode is on the second conductivity type semiconductor layer. The reflector layer is on a lower surface of the substrate.
34 Citations
22 Claims
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1. A light-emitting diode device, comprising:
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a substrate; a plurality of micro-lens formed on an upper surface of the substrate; a reflector formed on a lower surface of the substrate; a first conductivity type semiconductor layer formed on the substrate; an active layer formed on a partial area of the first conductivity type semiconductor layer; a second conductivity type semiconductor layer formed on the active layer; a first electrode formed on the other partial area of the first conductivity type semiconductor layer uncovered by the active layer; and a second electrode formed on the second conductivity type semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A light-emitting diode device, comprising:
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a substrate; a reflector formed on a lower surface of the substrate; a plurality of micro-lens formed between the substrate and the reflector; a first conductivity type semiconductor layer formed on an upper surface of the substrate; an active layer formed on a partial area of the first conductivity type semiconductor layer; a second conductivity type semiconductor layer formed on the active layer; a first electrode formed on the other partial area of the first conductivity type semiconductor layer uncovered by the active layer; and a second electrode formed on the second conductivity type semiconductor layer. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A method for fabricating a light-emitting diode device, comprising:
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providing a substrate; forming a plurality of micro-lens on an upper surface of the substrate; forming a first conductivity type semiconductor layer on the substrate; forming an active layer on the first conductivity type semiconductor layer; forming a second conductivity type semiconductor layer on the active layer; removing a portion of the second conductivity type semiconductor layer and a portion of the active layer to expose a portion of the first conductivity type semiconductor layer; forming a first electrode on the exposed portion of the first conductivity type semiconductor layer; forming a second electrode on the second conductivity type semiconductor layer; and forming a reflector on a lower surface of the substrate. - View Dependent Claims (14, 15, 16, 17)
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18. A method for fabricating a light-emitting diode device, comprising:
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providing a substrate; forming a reflector on a lower surface of the substrate; forming a plurality of micro-lens between the substrate and the reflector; forming a first conductivity type semiconductor layer on an upper surface of the substrate; forming an active layer on a partial area of the first conductivity type semiconductor layer; forming a second conductivity type semiconductor layer on the active layer; removing a portion of the second conductivity type semiconductor layer and a portion of the active layer to expose a portion of the first conductivity type semiconductor layer; forming a first electrode on the exposed portion of the first conductivity type semiconductor layer; and forming a second electrode on the second conductivity type semiconductor layer. - View Dependent Claims (19, 20, 21, 22)
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Specification