Semiconductor device

• US 20080303140A1
• Filed: 05/29/2008
• Published: 12/11/2008
• Est. Priority Date: 06/07/2007
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Ohtani, Hisashi, Sugiyama, Eiji
• Granted Patent: US 7,906,847 B2
• Time in Patent Office: Days
• US Class Current: 257/729
• CPC Class Codes: H01L 21/56 Encapsulations, e.g. encapsulation layers, coatings
• CPC Class Codes: H01L 23/295 containing a filler H01L23/296 takes precedence
• CPC Class Codes: H01L 23/3157 Partial encapsulation or coating mask layer used as insulation layer H01L21/31
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: H01L 2924/19041 being a capacitor

Abstract

To provide a semiconductor device which can increase reliability with respect to external force, especially pressing force, while the circuit size or the capacity of memory is maintained. A pair of structure bodies each having a stack of fibrous bodies of an organic compound or an inorganic compound, which includes a plurality of layers, especially three or more layers, is impregnated with an organic resin, and an element layer provided between the pair of structure bodies are included. The element layer and the structure body can be fixed to each other by heating and pressure bonding. Further, a layer for fixing the element layer and the structure body may be provided. Alternatively, the structure body fixed to an element layer can be formed in such a way that after a plurality of fibrous bodies is stacked over the element layer, the fibrous bodies are impregnated with an organic resin.

Claims

1. A semiconductor device comprising:

an element layer including a semiconductor element; and

a pair of structure bodies, each of the pair of structure bodies including a stack of a plurality of fibrous bodies which are impregnated with an organic resin,

wherein the element layer is fixed between the pair of structure bodies.

2. The semiconductor device according to claim 1, wherein the semiconductor element includes a transistor, the transistor including a plurality of channel formation regions which are mutually separated.

3. The semiconductor device according to claim 1, wherein the semiconductor element includes a plurality of transistors, gates of the plurality of transistors being connected to each other, sources thereof being connected to each other, and drains thereof being connected to each other.

4. The semiconductor device according to claim 1, wherein the fibrous body is a woven fabric or a nonwoven fabric.

5. The semiconductor device according to claim 1, wherein the fibrous body includes a material selected from a group consisting of a polyvinyl alcohol fiber, a polyester fiber, a polyamide fiber, a polyethylene fiber, an aramid fiber, a polyparaphenylene benzobisoxazole fiber, a glass fiber, and a carbon fiber.

6. The semiconductor device according to claim 1, wherein the organic resin includes a thermosetting resin or a thermoplastic resin.

7. The semiconductor device according to claim 6, wherein the thermosetting resin is an epoxy resin, an unsaturated polyester resin, a polyimide resin, a bismaleimide-triazine resin, or a cyanate resin.

8. The semiconductor device according to claim 6, wherein the thermoplastic resin is a polyphenylene oxide resin, a polyetherimide resin, or a fluorine resin.

9. The semiconductor device according to claim 1, wherein the plurality of fibrous bodies include three or more layers.

10. The semiconductor device according to claim 1, wherein the semiconductor element includes an island-shaped semiconductor film.

11. A semiconductor device comprising:

an element layer including a semiconductor element; and

a pair of structure bodies, each of the pair of structure bodies including a stack of a plurality of fibrous bodies which are impregnated with an organic resin,

wherein a ratio of a thickness of one of the pair of structure bodies to a thickness of the other of the pair of structure bodies is greater than or equal to 0.8 and less than or equal to 1.2, and

wherein the element layer is fixed between the pair of structure bodies.

12. The semiconductor device according to claim 11, wherein the semiconductor element includes a transistor, the transistor including a plurality of channel formation regions which are mutually separated.

13. The semiconductor device according to claim 11, wherein the semiconductor element includes a plurality of transistors, gates of the plurality of transistors being connected to each other, sources thereof being connected to each other, and drains thereof being connected to each other.

14. The semiconductor device according to claim 11, wherein the fibrous body is a woven fabric or a nonwoven fabric.

15. The semiconductor device according to claim 11, wherein the fibrous body includes a material selected from a group consisting of a polyvinyl alcohol fiber, a polyester fiber, a polyamide fiber, a polyethylene fiber, an aramid fiber, a polyparaphenylene benzobisoxazole fiber, a glass fiber, and a carbon fiber.

16. The semiconductor device according to claim 11, wherein the organic resin includes a thermosetting resin or a thermoplastic resin.

17. The semiconductor device according to claim 16, wherein the thermosetting resin is an epoxy resin, an unsaturated polyester resin, a polyimide resin, a bismaleimide-triazine resin, or a cyanate resin.

18. The semiconductor device according to claim 16, wherein the thermoplastic resin is a polyphenylene oxide resin, a polyetherimide resin, or a fluorine resin.

19. The semiconductor device according to claim 11, wherein the plurality of fibrous bodies include three or more layers.

20. The semiconductor device according to claim 11, wherein the semiconductor element includes an island-shaped semiconductor film.

21. A semiconductor device comprising:

an element layer including a semiconductor element; and

a pair of structure bodies, each of the pair of structure bodies including a stack of a plurality of fibrous bodies which are impregnated with an organic resin,

wherein each of the plurality of fibrous bodies uses warp yarns and weft yarns each formed by bundling a plurality of single yarns of an organic compound or an inorganic compound, and

22. The semiconductor device according to claim 21, wherein the fibrous body includes a material selected from a group consisting of a polyvinyl alcohol fiber, a polyester fiber, a polyamide fiber, a polyethylene fiber, an aramid fiber, a polyparaphenylene benzobisoxazole fiber, a glass fiber, and a carbon fiber.

23. The semiconductor device according to claim 21, wherein the organic resin includes a thermosetting resin or a thermoplastic resin.

24. The semiconductor device according to claim 23, wherein the thermosetting resin is an epoxy resin, an unsaturated polyester resin, a polyimide resin, a bismaleimide-triazine resin, or a cyanate resin.

25. The semiconductor device according to claim 23, wherein the thermoplastic resin is a polyphenylene oxide resin, a polyetherimide resin, or a fluorine resin.

26. The semiconductor device according to claim 21, wherein the plurality of fibrous bodies include three or more layers.

27. The semiconductor device according to claim 21, wherein the semiconductor element includes an island-shaped semiconductor film.

28. A semiconductor device comprising:

an element layer including a semiconductor element; and

a pair of structure bodies, each of the pair of structure bodies including a stack of a plurality of fibrous bodies which are impregnated with an organic resin,

wherein each of the plurality of fibrous bodies uses warp yarns and weft yarns each formed by bundling a plurality of single yarns of an organic compound or an inorganic compound,

wherein at least two fibrous bodies of the plurality of fibrous bodies have different directions of the warp yarns and the weft yarns, and

wherein the element layer is fixed between the pair of structure bodies.

29. The semiconductor device according to claim 28, wherein the fibrous body includes a material selected from a group consisting of a polyvinyl alcohol fiber, a polyester fiber, a polyamide fiber, a polyethylene fiber, an aramid fiber, a polyparaphenylene benzobisoxazole fiber, a glass fiber, and a carbon fiber.

30. The semiconductor device according to claim 28, wherein the organic resin includes a thermosetting resin or a thermoplastic resin.

31. The semiconductor device according to claim 30, wherein the thermosetting resin is an epoxy resin, an unsaturated polyester resin, a polyimide resin, a bismaleimide-triazine resin, or a cyanate resin.

32. The semiconductor device according to claim 30, wherein the thermoplastic resin is a polyphenylene oxide resin, a polyetherimide resin, or a fluorine resin.

33. The semiconductor device according to claim 28, wherein the plurality of fibrous bodies include three or more layers.

34. The semiconductor device according to claim 28, wherein the semiconductor element includes an island-shaped semiconductor film.