SUBSTRATE PROCESSING APPARATUS

• US 20080305014A1
• Filed: 06/03/2008
• Published: 12/11/2008
• Est. Priority Date: 06/07/2007
• Status: Abandoned Application

• Current Assignee: Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
• Original Assignee: Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
• Inventors: Honda, Koichi
• Application Number:
  US12/132,606
• Publication Number:
  US 20080305014A1
• Time in Patent Office: Days
• US Class Current: 422/111
• CPC Class Codes: G05D 7/0641 using a plurality of throttling means G05D7/067 takes precedence

Abstract

A substrate processing apparatus which stably supplies a vaporized gas of liquid raw material to a processing chamber includes liquid raw material tanks storing a liquid raw material, a carrier gas supply line supplying a carrier gas to one of the tanks, a raw material supply line pressure-feeding to this tank the liquid raw material of the other tank, a carrier gas supply line feeding a carrier gas to the tank, a raw material supply line feeding to the processing chamber a vaporized gas of the liquid raw material of the tank, a mass flow controller which controls the flow rate of the carrier gas, a mass flow controller detecting the flow rate of the vaporized gas of the liquid raw material, and a feedback device feeding back a detection result of the mass flow controller to the former mass flow controller.

Claims

1. A substrate processing apparatus comprising:

a processing chamber for processing a substrate;

a heating unit for heating the substrate;

an evacuation unit for removing atmospheric gases within said processing chamber;

first and second liquid raw material tanks each containing therein a liquid raw material;

a first carrier gas supply line for supplying a first carrier gas to the first liquid raw material tank;

a first raw material supply line for receiving supply of the first carrier gas to said first liquid raw material tank and for sending by pressure the liquid raw material of said first liquid raw material tank toward the second liquid raw material tank;

a second carrier gas supply line for supplying a second carrier gas to the second liquid raw material tank;

a second raw material supply line for receiving supply of the second carrier gas to said second liquid raw material tank and for supplying a vaporized gas of the liquid raw material of said second liquid raw material tank to said processing chamber;

a flow rate control device for controlling a flow rate of the second carrier gas flowing in said second carrier gas supply line;

a flow rate measure device for measuring a flow rate of the vaporized gas flowing in said second raw material supply line; and

a feedback device for feeding back a measure result of said flow rate measure device to said flow rate control device, wherein

said second liquid raw material tank is smaller in internal volume than said first liquid raw material tank and wherein said second liquid raw material tank reserves said liquid raw material required for a one time of processing.

2. A substrate processing apparatus according to claim 1, further comprising:

a control unit;

a liquid raw material supply device for supplying said liquid raw material to said first liquid raw material tank; and

a residual amount measure device provided at said first liquid raw material tank, for monitoring a residual amount of said liquid raw material in said first liquid raw material tank, wherein

said control device controls said liquid raw material supply device based on the measure result obtained by said residual amount measure device to thereby supply the liquid raw material from said liquid raw material supply device to said first liquid raw material tank in such a way that a predetermined amount of said liquid raw material is stored in said first liquid raw material tank at all times.

3. A substrate processing apparatus according to claim 1, wherein said control unit controls said heating unit in such a way as to heat at a predetermined temperature a gas supply pipe which couples together said processing chamber and said second liquid raw material tank.

4. A substrate processing apparatus according to claim 3, wherein a heating temperature of said gas supply pipe is different in accordance with the kind of said liquid raw material.

5. A substrate processing apparatus according to claim 1, wherein said liquid raw material is any one of TEMAH, TMA, TiCl₄, 4MS, HCD, H₂O and pyridine.

6. A substrate processing apparatus according to claim 1, wherein said second carrier gas supply line includes a bypass line which couples together said first carrier gas supply line and said first raw material supply line,

said first carrier gas and said second carrier gas are gases fed from the same gas source, and

said second carrier gas is supplied to said second liquid raw material tank by way of said bypass line without via said first liquid raw material tank.