Semiconductor Device and Manufacturing Method Thereof
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Abstract
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
1010 Citations
58 Claims
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1-38. -38. (canceled)
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39. A method of manufacturing a semiconductor device comprising the steps of:
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forming a gate electrode over a substrate; forming an insulating film over the gate electrode; forming an oxide semiconductor film over the gate electrode with the insulating film interposed therebetween; heating the oxide semiconductor film by lamp heating. - View Dependent Claims (40, 41, 42, 43, 44)
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45. A method of manufacturing a semiconductor device comprising the steps of:
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forming a gate electrode over a substrate; forming an insulating film over the gate electrode; forming an oxide semiconductor film over the gate electrode with the insulating film interposed therebetween; heating the oxide semiconductor film at a temperature of 250 to 570°
C. - View Dependent Claims (46, 47, 48, 49)
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50. A method of manufacturing a semiconductor device comprising the steps of:
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forming a gate electrode over a substrate; forming an insulating film over the gate electrode; forming an oxide semiconductor film over the gate electrode with the insulating film interposed therebetween; heating the oxide semiconductor film, wherein the heating step is performed for 1 minute to 1 hour - View Dependent Claims (51, 52)
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53. A method of manufacturing a semiconductor device comprising the steps of:
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forming a gate electrode over a substrate; forming an insulating film over the gate electrode; forming an oxide semiconductor film over the gate electrode with the insulating film interposed therebetween; heating the oxide semiconductor film; forming a source electrode and a drain electrode on the oxide semiconductor film; and forming a passivation film over at least the oxide semiconductor film and the source electrode and the drain electrode, wherein each of the source electrode and the drain electrode comprises a titanium film in contact with a surface of the oxide semiconductor film and a second conductive film comprising aluminum or aluminum alloy on the titanium film. - View Dependent Claims (54, 55, 56, 57, 58)
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Specification