Semiconductor Device and Manufacturing Method Thereof
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Abstract
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
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Citations
70 Claims
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1-38. -38. (canceled)
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39. An active matrix liquid crystal display device comprising:
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a gate electrode over a substrate; an insulating film over the gate electrode; an oxide semiconductor film over the gate electrode with the insulating film interposed therebetween; a channel protective film formed over the oxide semiconductor film; a source electrode and a drain electrode formed over the oxide semiconductor film and the channel protective film; a passivation film comprising an insulating material formed over at least the source electrode, the drain electrode, the channel protective film and the oxide semiconductor film; and a pixel electrode formed over the passivation film and electrically connected to one of the source electrode and the drain electrode. - View Dependent Claims (40, 41, 42, 43, 44)
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45. An active matrix liquid crystal display device comprising:
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a first gate electrode and a second gate electrode over a substrate wherein the first gate electrode and the second gate electrode are connected to each other; an insulating film over the first gate electrode and the second gate electrode; and an oxide semiconductor film over the first gate electrode and the second gate electrode with the insulating film interposed therebetween; a source electrode and a drain electrode formed over the oxide semiconductor film; a passivation film comprising an insulating material formed over at least the source electrode, the drain electrode and the oxide semiconductor film, wherein the passivation film is in direct contact with at least upper surfaces of the source electrode and the drain electrode and an upper surface of the oxide semiconductor film between the source electrode and the drain electrode; and a pixel electrode formed over the passivation film and electrically connected to one of the source electrode and the drain electrode. - View Dependent Claims (46, 47, 48)
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49. An active matrix liquid crystal display device comprising:
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a scanning line formed over a substrate; a signal line formed over the substrate across the scanning line; at least two thin film transistors formed over the substrate, each of the two thin film transistors comprising an oxide semiconductor film; and a pixel electrode formed over the substrate, wherein the two thin film transistors are electrically connected to the pixel electrode in series, and a gate electrode of each of the two thin film transistors is electrically connected to the scanning line. - View Dependent Claims (50, 51, 52)
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53. An active matrix liquid crystal display device comprising:
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a scanning line formed over a substrate; a signal line formed over the substrate across the scanning line; at least two thin film transistors formed over the substrate, each of the two thin film transistors comprising an oxide semiconductor film; and a pixel electrode; wherein a gate electrode of each of the two thin film transistors is electrically connected to the scanning line, and the two thin film transistors are connected between the pixel electrode and the signal line in series. - View Dependent Claims (54, 55, 56, 57)
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58. An active matrix liquid crystal display device comprising:
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a first thin film transistor formed over a substrate, the first thin film transistor including; a first gate electrode over the substrate; a first insulating film over the first gate electrode; and a first oxide semiconductor film over the first gate electrode with the first insulating film interposed therebetween, a pair of electrodes formed over the first oxide semiconductor film wherein each of the pair of electrodes comprises a titanium film in contact with an upper surface of the first oxide semiconductor film and a second conductive film comprising aluminum or an aluminum alloy formed on the titanium film; a passivation film formed over at least the first oxide semiconductor film and the pair of electrodes; a pixel electrode formed over the passivation film and electrically connected to the first thin film transistor; a first driver circuit electrically connected to the first thin film transistor; a second driver circuit electrically connected to the first thin film transistor; wherein at least one of the first and second driver circuits comprises a second thin film transistor, the second thin film transistor including; a second gate electrode over the substrate; a second insulating film over the second gate electrode; and a second oxide semiconductor film over the second gate electrode with the second insulating film interposed therebetween. - View Dependent Claims (59, 60, 61, 62, 63, 64)
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65. An active matrix liquid crystal display device comprising:
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a first thin film transistor formed over a substrate, the first thin film transistor including; a first gate electrode over the substrate; a first insulating film over the first gate electrode; and a first oxide semiconductor film over the first gate electrode with the first insulating film interposed therebetween, a pair of electrodes formed over the first oxide semiconductor film; a passivation film formed over at least the first oxide semiconductor film and the pair of electrodes; a pixel electrode formed over the passivation film and electrically connected to the first thin film transistor; a scanning line driver circuit electrically connected to the first gate electrode; a signal line driver circuit electrically connected to one of the pair of electrodes wherein the signal line driver circuit is mounted by one of a COG method or a TAB method; wherein the scanning line driver circuit comprises a second thin film transistor, the second thin film transistor including; a second gate electrode over the substrate; a second insulating film over the second gate electrode; and a second oxide semiconductor film over the second gate electrode with the second insulating film interposed therebetween. - View Dependent Claims (66, 67, 68, 69, 70)
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Specification