PROCESS FOR PREPARING A BONDING TYPE SEMICONDUCTOR SUBSTRATE
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Abstract
The process comprises a step of growing epitaxially mixed crystals of a compound semiconductor represented by the composition formula Inx(Ga1-yAly)1-xP on a GaAs substrate 12 to form an epi-wafer having an n-type cladding layer 14 (0.45≦x≦0.50, 0≦y≦1), an active layer 15, a p-type cladding layer 16 and a cover layer 17; a step of removing the cover layer 17 by etching to expose the surface of the p-type cladding layer 16; a step of integrally joining a mirror-finished GaP substrate 11 on the p-type cladding layer 16 by placing the GaP substrate on the cladding layer at room temperature so that the mirror-finished surface of the GaP substrate may come into contact with the p-type cladding layer 16; a step of subjecting the resultant laminate to a heat treatment; a step of carrying out an etching treatment from the side of the GaAs substrate 12 to expose the n-type cladding layer 14; and a step of forming electrodes 19 on the surface of the n-type cladding layer 14 and on the back surface of the GaP substrate 11, respectively.
28 Citations
37 Claims
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1-17. -17. (canceled)
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18. :
- A semiconductor light emitting element comprising;
a substrate having a transparency to emission which is emitted from an active layer;a laminate provided on an upper surface of the substrate so that a part of the upper surface of the substrate is exposed, the laminate including the active layer; a first electrode provided on an upper surface of the laminate; and a second electrode provided on a lower surface of the substrate, the lower surface being opposite to the upper surface, a light take-out portion being provided on a side of the upper surface of the substrate. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25)
- A semiconductor light emitting element comprising;
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26. :
- A process for preparing a bonding type semiconductor substrate, comprising;
a first step of forming a first epitaxial growth layer by epitaxially growing a semiconductor crystal on an etching stop layer which is formed on a first semiconductor substrate; a second step of integrally joining to the first epitaxial growth layer a second semiconductor substrate which has at least one surface mirror-polished, by placing the second semiconductor substrate on the first epitaxial growth layer so that the second semiconductor substrate may come into a contact with the first epitaxial growth layer via the mirror-polished surface or a second epitaxial growth layer grown on the mirror-polished surface, thereby producing a resultant laminate; and a third step of subjecting the resultant laminate to a heat treatment after at least part of a surface of the first semiconductor substrate has been removed therefrom. - View Dependent Claims (27, 28, 29, 30, 31)
- A process for preparing a bonding type semiconductor substrate, comprising;
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32. :
- A process for preparing a semiconductor light emitting element comprising;
a step of forming an etching stop layer on a first semiconductor substrate, and forming a first epitaxial growth layer including a laminate having a first cladding layer, an active layer and a second cladding layer deposited in this order by epitaxially growing a mixed crystal of compound semiconductor on the etching stop layer; a step of integrally joining to the first epitaxial growth layer a second semiconductor substrate which has at least one surface mirror-polished, by placing the second semiconductor substrate on the first epitaxial growth layer so that the second semiconductor substrate may come into contact with the first epitaxial growth layer via the mirror-polished surface or a second epitaxial growth layer grown on the mirror-polished surface, thereby producing a resultant laminate; a step of subjecting the resultant laminate to a heat treatment after at least part of a surface of the first semiconductor substrate has been removed therefrom; a step of exposing the first epitaxial growth layer by etching; and a step of forming electrodes on a side of the exposed surface of the first epitaxial growth layer and on a backside of the second semiconductor substrate. - View Dependent Claims (33, 34, 35, 36, 37)
- A process for preparing a semiconductor light emitting element comprising;
Specification