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Photoelectric conversion element having a semiconductor and semiconductor device using the same

  • US 20080308851A1
  • Filed: 03/27/2008
  • Published: 12/18/2008
  • Est. Priority Date: 04/18/2007
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a photoelectric conversion layer formed over a substrate;

    an amplifier circuit including at least two thin film transistors, wherein the amplifier circuit is formed over the substrate and is configured to amplify output current of the photoelectric conversion layer;

    a first interlayer insulating film formed over the photoelectric conversion layer and the amplifier circuit;

    a first electrode formed over the photoelectric conversion layer and the first interlayer insulating film, wherein the first electrode is electrically connected to the photoelectric conversion layer;

    a second interlayer insulating film formed over the first interlayer insulating film, wherein the second interlayer insulting film overlaps the amplifier circuit and has an opening that reaches the first electrode;

    a second electrode formed in the opening, wherein the second electrode is electrically connected to the first electrode; and

    a bonding layer formed over the second electrode, wherein the bonding layer overlaps the second interlayer insulating film and the second electrode,wherein the bonding layer contains a metal which is capable of forming an alloy with solder.

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