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Method for Determining Time Dependent Dielectric Breakdown

  • US 20080309365A1
  • Filed: 06/14/2007
  • Published: 12/18/2008
  • Est. Priority Date: 06/14/2007
  • Status: Active Grant
First Claim
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1. A method of determining a time dependent electrical breakdown characteristic of a dielectric layer in a semiconductor device comprising:

  • providing a plurality of samples of dielectric layer disposed as a gate dielectric layer of a MOS transistor;

    performing a first linear regression fit on data representing a logarithm of a source/drain current density distribution and data representing a logarithm of voltages applied on said samples;

    performing a second linear regression fit on data representing a logarithm of a substrate current density distribution and the data representing the logarithm of voltages applied on said samples;

    performing a third linear regression fit on data representing a logarithm of a dielectric layer lifetime distribution and second data representing a logarithm of the source/drain current density distribution and the substrate current density distribution on said samples;

    deriving, from said first, second, and third linear regression fits, an empirical model wherein a dielectric layer lifetime is a function of voltage applied thereon; and

    using said model to determine dielectric layer lifetime at a pre-determined operating gate voltage.

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