Semiconductor power device having a stacked discrete inductor structure
First Claim
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1. A semiconductor power device comprising:
- a discrete inductor having contacts formed on a first surface of the discrete inductor; and
at least one semiconductor component mounted on the first surface of the discrete inductor and coupled to the contacts.
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Abstract
A power device includes a discrete inductor having contacts formed on a first surface of the discrete inductor and at least one semiconductor component mounted on the first surface of the discrete inductor and coupled to the contacts. The discrete inductor further includes contacts formed on a second surface opposite the first surface and routing connections connecting the first surface contacts to corresponding second surface contacts. The semiconductor components may be flip chip mounted onto the discrete inductor contacts or wire bonded thereto.
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37 Claims
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1. A semiconductor power device comprising:
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a discrete inductor having contacts formed on a first surface of the discrete inductor; and at least one semiconductor component mounted on the first surface of the discrete inductor and coupled to the contacts. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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30. A discrete inductor comprising:
contacts formed on a first surface of the discrete inductor, the contacts comprising a lead frame for electrically connecting to at least one semiconductor integrated circuit through bonding wires. - View Dependent Claims (31, 32, 33)
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34. A discrete inductor comprising:
contacts formed on a first surface of the discrete inductor, the contacts including a ball grid array for flip chip connecting to at least one semiconductor integrated circuit. - View Dependent Claims (35, 36, 37)
Specification