Lithographic Apparatus and Method

• US 20080309899A1
• Filed: 06/14/2007
• Published: 12/18/2008
• Est. Priority Date: 06/14/2007
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Baselmans, Johannes Jacobus Matheus, Bleeker, Arno Jan
• Granted Patent: US 8,189,172 B2
• Time in Patent Office: Days
• US Class Current: 355/52
• CPC Class Codes: G03F 7/70291 Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
• CPC Class Codes: G03F 7/706 Aberration measurement

Abstract

Systems and methods are provided for measuring aberration in a lithographic apparatus. A radiation beam is modulated using an array of individually controllable elements, and the modulated beam is projected using a projection system. A pattern is provided on the array of individually controllable elements to modulate the radiation beam, and the pattern comprises a repeating structure that is formed from a plurality of features that are dimensioned such that first order diffraction of the radiation beam substantially fills the pupil of the projection system. A sensor detects the projected radiation and measures interference in the radiation projected by the projection system. Aberration in the detected radiation beam is then measured.

Claims

1. A method of measuring aberration in a lithographic apparatus, the method comprising:

modulating a radiation beam using an array of individually controllable elements;

projecting the modulated radiation beam using a projection system;

detecting the projected radiation using a sensor; and

measuring aberration in the detected radiation beam,

wherein a pattern is provided on the array of individually controllable elements to modulate the radiation beam, wherein the pattern has a repeating structure and is formed from a plurality of features, wherein the plurality of features are dimensioned to generate first order diffraction of the radiation beam that substantially fills the pupil of the projection system, and wherein the sensor measures interference in the radiation projected by the projection system.

2. The method of claim 1, wherein the features are randomly positioned.

3. The method of claim 1, wherein adjacent features are spaced apart from one another and do not overlap.

4. The method of claim 1, wherein the features measure less than

$1.22$



λ

2 . NA

across, where λ

is the wavelength of the radiation beam, and NA is the numerical aperture of the projection system.

5. The method of claim 1, wherein the features substantially eliminate zero order diffracted radiation through destructive interference.

6. The method of claim 5, wherein substantially half of the features provide radiation with a first phase, and substantially half of the features provide radiation with a second phase, which is opposite to the first phase.

7. The method of claim 6, wherein the individually controllable elements are mirrors having a phase step, and wherein substantially half of the features have a first orientation, and substantially half of the features have an opposite orientation.

8. The method of claim 1, wherein positions of the features change between pulses of the radiation beam.

9. The method of claim 1, wherein the features are disks, squares, rectangles or hexagons.

10. The method of claim 1, wherein the pattern has regularly repeating light areas and dark areas.

11. The method of claim 10, wherein the features are distributed to form the light areas and dark areas.

12. The method of claim 10, wherein the regularly repeating light areas and dark areas form (i) a checkerboard pattern or (ii) one or more series of stripes.

13. The method of claim 10, wherein an intensity variation between the light areas and the dark areas has a cosine function shape.

14. The method of claim 1, wherein the aberration is determined by detecting the first harmonic of the interference pattern in the radiation projected by the projection system.

15. The method of claim 1, wherein a grating forms part of the sensor, and wherein the interference is generated by a grating.

16. The method of claim 1, wherein the features are formed from groups of individually controllable elements.

17. A lithographic apparatus comprising:

an array of individually controllable elements configured to modulate a beam of radiation;

a projection system configured to project the modulated beam of radiation;

a sensor arranged to detect radiation projected by the projection system; and

a controller arranged to provide a pattern on the array of individually controllable elements;

wherein the pattern has a repeating structure and is formed from a plurality of features, wherein the plurality of features are dimensioned to generate first order diffraction of the radiation beam that substantially fills the pupil of the projection system, and wherein the sensor is arranged to measure interference in the radiation projected by the projection system.

18. The lithographic apparatus of claim 17, wherein individually controllable elements are mirrors having respective phase steps.

19. The lithographic apparatus of claim 18, wherein substantially half of the features are formed using mirrors having a first orientation, and substantially half of the features are formed using mirrors having a second orientation, which is opposite to the first orientation.

20. The lithographic apparatus of claim 17, wherein the sensor comprises a detector and a grating, wherein the grating is positioned away from the detector, and wherein the grating is in an image plane of the projection system and the detector is in the far field.