METHOD AND SYSTEM FOR PROVIDING SPIN TRANSFER TUNNELING MAGNETIC MEMORIES UTILIZING NON-PLANAR TRANSISTORS
First Claim
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1. A magnetic memory cell comprising:
- at least one magnetic element, the at least one magnetic element being programmable using at least one write current driven through the magnetic element; and
at least one non-planar selection device coupled with the at least one magnetic element.
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Abstract
A magnetic memory cell and a magnetic memory incorporating the cell are described. The magnetic memory cell includes at least one magnetic element and at least one non-planar selection device. The magnetic element(s) are programmable using write current(s) driven through the magnetic element. The magnetic memory may include a plurality of magnetic storage cells, a plurality of bit lines corresponding to the plurality of magnetic storage cells, and a plurality of source lines corresponding to the plurality of magnetic storage cells.
238 Citations
20 Claims
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1. A magnetic memory cell comprising:
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at least one magnetic element, the at least one magnetic element being programmable using at least one write current driven through the magnetic element; and at least one non-planar selection device coupled with the at least one magnetic element. - View Dependent Claims (2, 3)
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4. A magnetic memory comprising:
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a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including at least one magnetic element and at least one non-planar selection device, the at least one magnetic element being programmable using at least one write current driven through the magnetic element; a plurality of bit lines corresponding to the plurality of magnetic storage cells; and a plurality of source lines corresponding to the plurality of magnetic storage cells. - View Dependent Claims (5, 6, 7, 8, 9, 10, 11)
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12. A magnetic memory comprising:
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a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including at least one magnetic element and at least one non-planar selection device, the at least one magnetic element being programmable using at least one write current driven through the magnetic element; a plurality of bit lines corresponding to the plurality of magnetic storage cells;
providing anda plurality of source lines corresponding to the plurality of magnetic storage cells; wherein the non-planar transistor includes at least one of a multiple gate transistor;
a silicon on oxide (SOI) transistor, a type of Fin field effect transistor (FinFET), a multiple-gate SOI transistor, a nanowire transistor, a (carbon) nanotube transistor, a delta transistor, a folded channel transistor, a triangular wire transistor, a vertical channel transistor, a vertical-source planar gate transistor, and a round-gate transistor. - View Dependent Claims (13)
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14. A method for fabricating a magnetic memory comprising:
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providing a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including at least one magnetic element and at least one non-planar selection device, the at least one magnetic element being programmable using at least one write current driven through the magnetic element; providing a plurality of bit lines corresponding to the plurality of magnetic storage cells;
providing andproviding a plurality of source lines corresponding to the plurality of magnetic storage cells. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification