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METHOD AND SYSTEM FOR PROVIDING SPIN TRANSFER TUNNELING MAGNETIC MEMORIES UTILIZING NON-PLANAR TRANSISTORS

  • US 20080310213A1
  • Filed: 06/15/2007
  • Published: 12/18/2008
  • Est. Priority Date: 06/15/2007
  • Status: Active Grant
First Claim
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1. A magnetic memory cell comprising:

  • at least one magnetic element, the at least one magnetic element being programmable using at least one write current driven through the magnetic element; and

    at least one non-planar selection device coupled with the at least one magnetic element.

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