MAGNETIC RANDOM ACCESS MEMORY AND WRITE METHOD OF THE SAME
First Claim
1. A spin transfer torque magnetization switching type magnetic random access memory comprising:
- a memory unit including a memory cell array having a first memory cell for writing first information and a second memory cell for writing second information; and
a controller connected to the memory unit, and configured to start supplying a write current in a first direction for writing the first information to the first memory cell and the second memory cell before a write data signal is determined, and, after the write data signal is determined, keep supplying the write current in the first direction to the first memory cell and supply the write current changed in a second direction for writing the second information to the second memory cell alone.
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Abstract
A magnetic random access memory includes a memory unit including a memory cell array having a first memory cell for writing first information and a second memory cell for writing second information, and a controller connected to the memory unit, and configured to start supplying a write current in a first direction for writing the first information to the first memory cell and the second memory cell before a write data signal is determined, and, after the write data signal is determined, keep supplying the write current in the first direction to the first memory cell and supply the write current changed in a second direction for writing the second information to the second memory cell alone.
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Citations
20 Claims
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1. A spin transfer torque magnetization switching type magnetic random access memory comprising:
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a memory unit including a memory cell array having a first memory cell for writing first information and a second memory cell for writing second information; and a controller connected to the memory unit, and configured to start supplying a write current in a first direction for writing the first information to the first memory cell and the second memory cell before a write data signal is determined, and, after the write data signal is determined, keep supplying the write current in the first direction to the first memory cell and supply the write current changed in a second direction for writing the second information to the second memory cell alone. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A write method of a spin transfer torque magnetization switching type magnetic random access memory including:
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a memory unit including a memory cell array having a first memory cell for writing first information and a second memory cell for writing second information; and a controller connected to the memory unit, the write method comprising; starting supplying a write current in a first direction for writing the first information to the first memory cell and the second memory cell, before a write data signal is determined; and after the write data signal is determined, keeping supplying the write current in the first direction to the first memory cell, and supplying the write current changed in a second direction for writing the second information to the second memory cell alone. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification
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- Resources
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Current AssigneeKabushiki Kaisha Toshiba (Toshiba Corporation)
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Original AssigneeKabushiki Kaisha Toshiba (Toshiba Corporation)
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InventorsUeda, Yoshihiro
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Application NumberUS12/138,017Publication NumberTime in Patent OfficeDaysField of SearchUS Class Current365/158CPC Class CodesG11C 11/16 using elements in which the...
