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MAGNETIC RANDOM ACCESS MEMORY AND WRITE METHOD OF THE SAME

  • US 20080310215A1
  • Filed: 06/12/2008
  • Published: 12/18/2008
  • Est. Priority Date: 06/13/2007
  • Status: Abandoned Application
First Claim
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1. A spin transfer torque magnetization switching type magnetic random access memory comprising:

  • a memory unit including a memory cell array having a first memory cell for writing first information and a second memory cell for writing second information; and

    a controller connected to the memory unit, and configured to start supplying a write current in a first direction for writing the first information to the first memory cell and the second memory cell before a write data signal is determined, and, after the write data signal is determined, keep supplying the write current in the first direction to the first memory cell and supply the write current changed in a second direction for writing the second information to the second memory cell alone.

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