METHOD OF GROWING CARBON NANOTUBES AND METHOD OF MANUFACTURING FIELD EMISSION DEVICE USING THE SAME
First Claim
1. A method of growing carbon nanotubes, comprising:
- preparing a substrate;
forming a catalyst metal layer on the substrate to promote growing of carbon nanotubes;
forming an amorphous carbon layer on the catalyst metal layer, the amorphous carbon layer partially covering the catalyst metal layer; and
growing carbon nanotubes from a surface of the catalyst metal layer, the carbon nanotubes being grown on a portion of the surface of the catalyst metal layer that is not covered by the amorphous carbon layer.
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Abstract
Methods of growing carbon nanotubes and manufacturing a field emission device using the carbon nanotubes are provided. The method of growing carbon nanotubes includes the steps of preparing a substrate, forming a catalyst metal layer on the substrate to promote the growing of the carbon nanotubes, forming an amorphous carbon layer on the catalyst metal layer where the amorphous carbon layer partially covers the catalyst metal layer, and growing the carbon nanotubes from a surface of the catalyst metal layer. The carbon nanotubes are grown in a portion of the surface of the catalyst metal layer that is not covered by the amorphous carbon layer. In the method of growing carbon nanotubes, the carbon nanotubes are grow at a low temperature. A density of carbon nanotubes can be controlled to improve field emission characteristics of an emitter of a field emission device.
14 Citations
24 Claims
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1. A method of growing carbon nanotubes, comprising:
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preparing a substrate; forming a catalyst metal layer on the substrate to promote growing of carbon nanotubes; forming an amorphous carbon layer on the catalyst metal layer, the amorphous carbon layer partially covering the catalyst metal layer; and growing carbon nanotubes from a surface of the catalyst metal layer, the carbon nanotubes being grown on a portion of the surface of the catalyst metal layer that is not covered by the amorphous carbon layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of manufacturing a field emission device, comprising:
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preparing a panel that includes a substrate, a negative electrode formed on the substrate, a gate electrode insulating layer formed on the negative electrode, and a gate electrode formed on the gate electrode insulating layer; forming a well through the gate electrode and the gate electrode insulating layer until the negative electrode is exposed at a bottom of the well; forming a catalyst metal layer on the negative electrode to promote growing of carbon nanotubes; forming an amorphous carbon layer on the catalyst metal layer, the amorphous carbon layer partially covering the catalyst metal layer; and forming a carbon nanotube emitter by growing carbon nanotubes from a surface of the catalyst metal layer, the carbon nanotubes being grown on a portion of the surface of the catalyst metal layer that is not covered by the amorphous carbon layer. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A method of manufacturing a field emission device, comprising:
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preparing a panel that includes a substrate, a negative electrode formed on the substrate, a silicon layer formed on the negative electrode, a gate electrode insulating layer formed on the silicon layer, and a gate electrode formed on the gate electrode insulating layer; forming a well through the gate electrode and the gate electrode insulating layer until the silicon layer is exposed at a bottom of the well; forming a catalyst metal layer on the silicon layer to promote growing of carbon nanotubes; forming an amorphous carbon layer on the catalyst metal layer, the amorphous carbon layer partially covering the catalyst metal layer; and forming a carbon nanotube emitter by growing carbon nanotubes from a surface of the catalyst metal layer, the carbon nanotubes being grown on a portion of the surface of the catalyst metal layer that is not covered by the amorphous carbon layer.
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Specification