SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE USING THE SAME
First Claim
1. A semiconductor device comprising a high electron mobility transistor and a diode in a same semiconductor chip,wherein the semiconductor chip has a semiconductor substrate having a first main surface and a second main surface positioned on mutually opposite sides in a thickness direction and a compound semiconductor layer formed on the semiconductor substrate,the high electron mobility transistor has the compound semiconductor layer, a drain electrode, a gate electrode and a source electrode formed on a main surface of the compound semiconductor layer,the diode has a cathode region formed in the semiconductor substrate, an anode region formed on the first main surface side of the semiconductor substrate so as to be in contact with the cathode region and an anode electrode formed on the main surface of the compound semiconductor layer, andthe anode electrode is electrically connected to the anode region via a conductive material embedded in a hole which reaches the anode region of the first main surface of the semiconductor substrate from the main surface of the compound semiconductor layer.
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Accused Products
Abstract
In a semiconductor device in which a diode and a high electron mobility transistor are incorporated in the same semiconductor chip, a compound semiconductor layer of the high electron mobility transistor is formed on a main surface (first main surface) of a semiconductor substrate of the diode, and an anode electrode of the diode is electrically connected to an anode region via a conductive material embedded in a via hole (hole) reaching a p+ region which is the anode region of the main surface of the semiconductor substrate from a main surface of the compound semiconductor layer.
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Citations
13 Claims
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1. A semiconductor device comprising a high electron mobility transistor and a diode in a same semiconductor chip,
wherein the semiconductor chip has a semiconductor substrate having a first main surface and a second main surface positioned on mutually opposite sides in a thickness direction and a compound semiconductor layer formed on the semiconductor substrate, the high electron mobility transistor has the compound semiconductor layer, a drain electrode, a gate electrode and a source electrode formed on a main surface of the compound semiconductor layer, the diode has a cathode region formed in the semiconductor substrate, an anode region formed on the first main surface side of the semiconductor substrate so as to be in contact with the cathode region and an anode electrode formed on the main surface of the compound semiconductor layer, and the anode electrode is electrically connected to the anode region via a conductive material embedded in a hole which reaches the anode region of the first main surface of the semiconductor substrate from the main surface of the compound semiconductor layer.
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13. A power conversion device comprising a semiconductor device as a switching element,
wherein the semiconductor device includes a high electron mobility transistor and a diode in a same semiconductor chip, the semiconductor chip has a semiconductor substrate having a first main surface and a second main surface positioned on mutually opposite sides in a thickness direction and a compound semiconductor layer formed on the semiconductor substrate, the high electron mobility transistor has the compound semiconductor layer, a drain electrode, a gate electrode and a source electrode formed on a main surface of the compound semiconductor layer, the diode has a cathode region formed in the semiconductor substrate, an anode region formed on the first main surface side of the semiconductor substrate so as to be in contact with the cathode region and an anode electrode formed on the main surface of the compound semiconductor layer, and the anode electrode is electrically connected to the anode region via a conductive material embedded in a hole which reaches the anode region of the first main surface of the semiconductor substrate from the main surface of the compound semiconductor layer.
Specification