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SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE USING THE SAME

  • US 20080315257A1
  • Filed: 06/19/2008
  • Published: 12/25/2008
  • Est. Priority Date: 06/19/2007
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising a high electron mobility transistor and a diode in a same semiconductor chip,wherein the semiconductor chip has a semiconductor substrate having a first main surface and a second main surface positioned on mutually opposite sides in a thickness direction and a compound semiconductor layer formed on the semiconductor substrate,the high electron mobility transistor has the compound semiconductor layer, a drain electrode, a gate electrode and a source electrode formed on a main surface of the compound semiconductor layer,the diode has a cathode region formed in the semiconductor substrate, an anode region formed on the first main surface side of the semiconductor substrate so as to be in contact with the cathode region and an anode electrode formed on the main surface of the compound semiconductor layer, andthe anode electrode is electrically connected to the anode region via a conductive material embedded in a hole which reaches the anode region of the first main surface of the semiconductor substrate from the main surface of the compound semiconductor layer.

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