SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE USING THE SAME

• US 20080315257A1
• Filed: 06/19/2008
• Published: 12/25/2008
• Est. Priority Date: 06/19/2007
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: SHIRAISHI, Masaki
• Granted Patent: US 7,838,907 B2
• Time in Patent Office: Days
• US Class Current: 257/195
• CPC Class Codes: H01L 21/8258 the substrate being a semiconductor, using a combination of technologies covered by H01L21/8206, H01L21/8213 , H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 27/0605 integrated circuits made of compound material, e.g. AIIIBV
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/7787 with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
• CPC Class Codes: H01L 29/861 Diodes
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Abstract

In a semiconductor device in which a diode and a high electron mobility transistor are incorporated in the same semiconductor chip, a compound semiconductor layer of the high electron mobility transistor is formed on a main surface (first main surface) of a semiconductor substrate of the diode, and an anode electrode of the diode is electrically connected to an anode region via a conductive material embedded in a via hole (hole) reaching a p⁺ region which is the anode region of the main surface of the semiconductor substrate from a main surface of the compound semiconductor layer.

Claims

1. A semiconductor device comprising a high electron mobility transistor and a diode in a same semiconductor chip,

wherein the semiconductor chip has a semiconductor substrate having a first main surface and a second main surface positioned on mutually opposite sides in a thickness direction and a compound semiconductor layer formed on the semiconductor substrate,

the high electron mobility transistor has the compound semiconductor layer, a drain electrode, a gate electrode and a source electrode formed on a main surface of the compound semiconductor layer,

the diode has a cathode region formed in the semiconductor substrate, an anode region formed on the first main surface side of the semiconductor substrate so as to be in contact with the cathode region and an anode electrode formed on the main surface of the compound semiconductor layer, and

the anode electrode is electrically connected to the anode region via a conductive material embedded in a hole which reaches the anode region of the first main surface of the semiconductor substrate from the main surface of the compound semiconductor layer.

2. The semiconductor device according to claim 1,

wherein the source electrode of the high electron mobility transistor and the anode region of the diode are electrically connected to each other.

3. The semiconductor device according to claim 2,

wherein the source electrode of the high electron mobility transistor and the anode region of the diode are connected to each other by the conductive material constituting the anode electrode.

4. The semiconductor device according to claim 3,

wherein the drain electrode, the gate electrode and the source electrode are sequentially disposed on the main surface of the compound semiconductor layer at predetermined intervals, and

above the main surface of the compound semiconductor layer, the anode electrode is disposed so as to extend along the main surface of the compound semiconductor layer from the source electrode side to a part between the gate electrode and the drain electrode.

5. The semiconductor device according to claim 2,

wherein a cathode electrode of the diode is electrically connected to the drain electrode of the high electron mobility transistor in the semiconductor chip.

6. The semiconductor device according to claim 5,

wherein the semiconductor substrate has a first semiconductor layer and a second semiconductor layer of a first conductivity type sequentially stacked from the second main surface,

the first semiconductor layer has a first impurity concentration,

the second semiconductor layer has a second impurity concentration lower than the first impurity concentration, and

the cathode electrode of the diode is electrically connected to the drain electrode via the conductive material embedded in a hole which reaches the first semiconductor layer of the semiconductor substrate from the main surface of the compound semiconductor layer.

7. The semiconductor device according to claim 5,

wherein the semiconductor substrate has a first semiconductor layer and a second semiconductor layer of a first conductivity type sequentially stacked from the second main surface,

the first semiconductor layer has a first impurity concentration,

the second semiconductor layer has a second impurity concentration lower than the first impurity concentration,

the second semiconductor layer has a third semiconductor region which extends from the first main surface to reach a contact surface with the first semiconductor layer, and

the cathode electrode of the diode is electrically connected to the drain electrode via the conductive material embedded in a hole which reaches the third semiconductor region of the semiconductor substrate from the main surface of the compound semiconductor layer.

8. The semiconductor device according to claim 1,

wherein the semiconductor substrate has a first semiconductor layer and a second semiconductor layer of a first conductivity type sequentially stacked from the second main surface,

the first semiconductor layer has a first impurity concentration,

the second semiconductor layer has a second impurity concentration lower than the first impurity concentration, and

the diode has a cathode electrode on the second main surface of the first substrate.

9. The semiconductor device according to claim 1,

wherein a semiconductor material constituting the semiconductor substrate is silicon.

10. The semiconductor device according to claim 1,

wherein the anode region of the diode is a semiconductor region having a conductivity type opposite to the first conductivity type.

11. The semiconductor device according to claim 1,

wherein the semiconductor substrate has a first semiconductor layer and a second semiconductor layer of a first conductivity type sequentially stacked from the second main surface,

the first semiconductor layer has a first impurity concentration,

the second semiconductor layer has a second impurity concentration lower than the first impurity concentration, and

the anode region of the diode is a Schottky barrier metal.

12. The semiconductor device according to claim 11,

wherein a semiconductor material constituting the semiconductor substrate is silicon carbide.

13. A power conversion device comprising a semiconductor device as a switching element,

wherein the semiconductor device includes a high electron mobility transistor and a diode in a same semiconductor chip,

the semiconductor chip has a semiconductor substrate having a first main surface and a second main surface positioned on mutually opposite sides in a thickness direction and a compound semiconductor layer formed on the semiconductor substrate,

the high electron mobility transistor has the compound semiconductor layer, a drain electrode, a gate electrode and a source electrode formed on a main surface of the compound semiconductor layer,

the diode has a cathode region formed in the semiconductor substrate, an anode region formed on the first main surface side of the semiconductor substrate so as to be in contact with the cathode region and an anode electrode formed on the main surface of the compound semiconductor layer, and

the anode electrode is electrically connected to the anode region via a conductive material embedded in a hole which reaches the anode region of the first main surface of the semiconductor substrate from the main surface of the compound semiconductor layer.