Semiconductor substrate and maehtod for manufacturing the same

• US 20080315351A1
• Filed: 06/03/2008
• Published: 12/25/2008
• Est. Priority Date: 06/20/2007
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kakehata, Tetsuya
• Granted Patent: US 7,781,306 B2
• Time in Patent Office: Days
• US Class Current: 257/507
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 29/66772 Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates H01L29/66666 takes precedence; thin film FinFETs H01L29/66795
• CPC Class Codes: H10B 20/00 Read-only memory [ROM] devices
• CPC Class Codes: H10B 20/30 having the source region and the drain region on the same level, e.g. lateral transistors

Abstract

A semiconductor device and a method for manufacturing thereof are provided. The method includes a step of forming a first insulating film containing silicon and oxygen as its composition over a single-crystal semiconductor substrate, a step of forming a second insulating film containing silicon and nitrogen as its composition over the first insulating film, a step of irradiating the second insulating film with first ions to form a separation layer in the single-crystal semiconductor substrate, a step of irradiating the second insulating film with second ions so that halogen is contained in the first insulating film, and a step of performing heat treatment to separate the single-crystal semiconductor substrate with a single-crystal semiconductor film left over the supporting substrate.

Claims

1. A method for manufacturing a semiconductor substrate comprising the steps of:

forming a first insulating film containing silicon and oxygen as its composition over a single-crystal semiconductor substrate;

forming a second insulating film containing silicon and nitrogen as its composition over the first insulating film;

irradiating the second insulating film with first ions to form a separation layer in the single-crystal semiconductor substrate;

irradiating the second insulating film with second ions so that halogen is contained in the first insulating film, wherein the second ions are halogen ions;

forming a bonding layer over the second insulating film;

bonding the single-crystal semiconductor substrate and a supporting substrate with the bonding layer interposed therebetween; and

performing heat treatment to separate the single-crystal semiconductor substrate with a single-crystal semiconductor film left over the supporting substrate, and accordingly the halogen is contained in the single-crystal semiconductor film.

2. The method for manufacturing a semiconductor substrate according to claim 1, wherein the first insulating film containing silicon and oxygen as its composition is a thermal oxide film.

3. The method for manufacturing a semiconductor substrate according to claim 1, wherein the first insulating film containing silicon and oxygen as its composition is a silicon oxide film or a silicon oxynitride film.

4. The method for manufacturing a semiconductor substrate according to claim 1, wherein the second insulating film containing silicon and nitrogen as its composition is a silicon nitride film or a silicon nitride oxide film.

5. The method for manufacturing a semiconductor substrate according to claim 1, wherein the halogen is fluorine or chlorine.

6. The method for manufacturing a semiconductor substrate according to claim 1, wherein the bonding layer is a silicon oxide film or a film having siloxane bonds.

7. The method for manufacturing a semiconductor substrate according to claim 1, wherein the bonding layer is a silicon oxide film, and wherein the silicon oxide film is formed by a chemical vapor deposition method, using organic silane or inorganic silane as a source gas.

8. The method for manufacturing a semiconductor substrate according to claim 1, wherein the supporting substrate is one selected from the group consisting of a glass substrate, a quartz substrate, a ceramic substrate, a sapphire substrate, and a metal substrate whose surface is coated with an insulating film.

9. The method for manufacturing a semiconductor substrate according to claim 1, wherein a second bonding layer and a barrier film are provided over the supporting substrate.

10. A method for manufacturing a semiconductor substrate comprising the steps of:

forming a first insulating film containing silicon and oxygen as its composition over a single-crystal semiconductor substrate;

forming a second insulating film containing silicon and nitrogen as its composition over the first insulating film;

irradiating the second insulating film with first ions to form a separation layer in the single-crystal semiconductor substrate;

irradiating the second insulating film with second ions so that halogen is contained in the first insulating film, wherein the second ions are halogen ions;

forming a bonding layer over the second insulating film;

bonding the single-crystal semiconductor substrate and a supporting substrate with the bonding layer interposed therebetween; and

performing heat treatment to separate the single-crystal semiconductor substrate with a single-crystal semiconductor film left over the supporting substrate, and accordingly the halogen is contained in the single-crystal semiconductor film,

wherein the heat treatment is performed at a temperature of greater than or equal to 550°

C. and less than or equal to the strain point of the supporting substrate.

11. The method for manufacturing a semiconductor substrate according to claim 10, wherein the first insulating film containing silicon and oxygen as its composition is a thermal oxide film.

12. The method for manufacturing a semiconductor substrate according to claim 10, wherein the first insulating film containing silicon and oxygen as its composition is a silicon oxide film or a silicon oxynitride film.

13. The method for manufacturing a semiconductor substrate according to claim 10, wherein the second insulating film containing silicon and nitrogen as its composition is a silicon nitride film or a silicon nitride oxide film.

14. The method for manufacturing a semiconductor substrate according to claim 10, wherein the halogen is fluorine or chlorine.

15. The method for manufacturing a semiconductor substrate according to claim 10, wherein the bonding layer is a silicon oxide film or a film having siloxane bonds.

16. The method for manufacturing a semiconductor substrate according to claim 10, wherein the bonding layer is a silicon oxide film, and wherein the silicon oxide film is formed by a chemical vapor deposition method, using organic silane or inorganic silane as a source gas.

17. The method for manufacturing a semiconductor substrate according to claim 10, wherein the supporting substrate is one selected from the group consisting of a glass substrate, a quartz substrate, a ceramic substrate, a sapphire substrate, and a metal substrate whose surface is coated with an insulating film.

18. The method for manufacturing a semiconductor substrate according to claim 10, wherein a second bonding layer and a barrier film are provided over the supporting substrate.

19. A semiconductor substrate comprising:

a single-crystal semiconductor film containing halogen;

a first insulating film containing silicon and oxygen as its composition overlapped with the single-crystal semiconductor film;

a second insulating film containing silicon and nitrogen as its composition overlapped with the first insulating film;

a bonding layer overlapped with the second insulating film; and

a supporting substrate overlapped with the bonding layer.

20. The semiconductor substrate according to claim 19, wherein the first insulating film containing silicon and oxygen as its composition is a thermal oxide film.

21. The semiconductor substrate according to claim 19, wherein the first insulating film containing silicon and oxygen as its composition is a silicon oxide film or a silicon oxynitride film.

22. The semiconductor substrate according to claim 19, wherein the second insulating film containing silicon and nitrogen as its composition is a silicon nitride film or a silicon nitride oxide film.

23. The semiconductor substrate according to claim 19, wherein the halogen is fluorine or chlorine.

24. The semiconductor substrate according to claim 19, wherein the bonding layer is a silicon oxide film or a film having siloxane bonds.

25. The semiconductor substrate according to claim 19, wherein the supporting substrate is one selected from the group consisting of a glass substrate, a quartz substrate, a ceramic substrate, a sapphire substrate, and a metal substrate whose surface is coated with an insulating film.

26. The semiconductor substrate according to claim 19, wherein a second bonding layer and a barrier film are provided between the supporting substrate and the bonding layer.