Silicon Wafer Having Through-Wafer Vias
First Claim
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1. A semiconductor device comprising:
- a semiconductor substrate having first and second main surfaces opposite to each other;
at least one conductive via extending from the first main surface through the semiconductor substrate to the second main surface;
a dielectric lining surrounding the at least one conductive via through the semiconductor substrate, the at least one conductive via being electrically isolated from the semiconductor substrate by the dielectric liner;
an electrical component electrically connected to the at least one conductive via at the first main surface; and
a cap sealed to the first main surface, the cap enclosing at least a portion of the electrical component and the electrical connection between the electrical component and the at least one conductive via.
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Abstract
A method of manufacturing a semiconductor device includes providing a semiconductor substrate having first and second main surfaces opposite to each other. A trench is formed in the semiconductor substrate at the first main surface. The trench extends to a first depth position in the semiconductor substrate. The trench is lined with the dielectric material. The trench is filled with a conductive material. An electrical component is electrically connected to the conductive material exposed at the first main surface. A cap is mounted to the first main surface. The cap encloses the electrical component and the electrical connection.
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Citations
6 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate having first and second main surfaces opposite to each other; at least one conductive via extending from the first main surface through the semiconductor substrate to the second main surface; a dielectric lining surrounding the at least one conductive via through the semiconductor substrate, the at least one conductive via being electrically isolated from the semiconductor substrate by the dielectric liner; an electrical component electrically connected to the at least one conductive via at the first main surface; and a cap sealed to the first main surface, the cap enclosing at least a portion of the electrical component and the electrical connection between the electrical component and the at least one conductive via. - View Dependent Claims (2, 3)
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4. A semiconductor device comprising:
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a semiconductor substrate having first and second main surfaces opposite to each other; at least one conductive via extending from the first main surface through the semiconductor substrate to the second main surface, the at least one conductive via being formed from a portion of the semiconductor substrate; a dielectric lining surrounding the at least one conductive via through the semiconductor substrate, the at least one conductive via being electrically isolated from the semiconductor substrate by the dielectric lining; an electrical component electrically connected to the at least one conductive via at the first main surface; and a cap sealed to the first main surface, the cap enclosing at least a portion of the electrical component and the electrical connection between the electrical component and the at least one conductive via. - View Dependent Claims (5, 6)
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Specification