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VLSI HOT-SPOT MINIMIZATION USING NANOTUBES

  • US 20080316711A1
  • Filed: 07/08/2008
  • Published: 12/25/2008
  • Est. Priority Date: 03/29/2006
  • Status: Active Grant
First Claim
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1. A semiconductive device comprising a die, said device having:

  • (a) at least one defined hot-spot area lying in a plane on said die;

    (b) cooling means comprising a plurality of nanotube means composed of a first heat conducting material and extending in a plane different than the plane of said hot-spot area and outwardly from the plane of said hot-spot area, said nanotube means operatively associated with said hot-spot area to decrease any temperature gradient between said hot-spot area and at least one other area on said die defined by a temperature lower than said hot-spot area;

    (c) said nanotube means being substantially surrounded by a matrix material comprised of a second heat conducting material operatively associated with and in heat conducting relation with said other area on said die defined by a temperature lower than said hot-spot area;

    (d) the heat conductivity of said first heat conducting material being greater than the heat conductivity of said second heat conducting material;

    (e) the distal ends of said nanotube means comprising said first heat conducting material, and positioned for direct contact with a medium comprising a heat exchange medium.

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