Method of making nonvolatile memory device containing carbon or nitrogen doped diode
First Claim
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1. A method of making a nonvolatile memory device, comprising:
- forming a first electrode;
forming at least one nonvolatile memory cell comprising a silicon, germanium or silicon-germanium diode;
doping the diode with at least one of nitrogen or carbon; and
forming a second electrode over the at least one nonvolatile memory cell.
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Abstract
A method of making a nonvolatile memory device includes forming a first electrode, forming at least one nonvolatile memory cell comprising a silicon, germanium or silicon-germanium diode, doping the diode with at least one of nitrogen or carbon, and forming a second electrode over the at least one nonvolatile memory cell.
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Citations
20 Claims
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1. A method of making a nonvolatile memory device, comprising:
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forming a first electrode; forming at least one nonvolatile memory cell comprising a silicon, germanium or silicon-germanium diode; doping the diode with at least one of nitrogen or carbon; and forming a second electrode over the at least one nonvolatile memory cell. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of operating a nonvolatile memory device, comprising:
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providing at least one memory cell which comprises a silicon, germanium or silicon-germanium diode doped with at least one of carbon or nitrogen, wherein the diode has been switched from a first higher resistivity, unprogrammed state to a second lower resistivity, programmed state; and applying a reverse bias to the diode to switch the diode to a third resistivity, reset state, wherein the third resistivity state is higher than the second resistivity state. - View Dependent Claims (17, 18, 19, 20)
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Specification