Nonvolatile memory device containing carbon or nitrogen doped diode
First Claim
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1. A nonvolatile memory device, comprising at least one nonvolatile memory cell which comprises a silicon, germanium or silicon-germanium diode which is doped with at least one of carbon or nitrogen in a concentration greater than an unavoidable impurity level concentration.
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Abstract
A nonvolatile memory device includes at least one nonvolatile memory cell which comprises a silicon, germanium or silicon-germanium diode which is doped with at least one of carbon or nitrogen in a concentration greater than an unavoidable impurity level concentration.
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Citations
20 Claims
- 1. A nonvolatile memory device, comprising at least one nonvolatile memory cell which comprises a silicon, germanium or silicon-germanium diode which is doped with at least one of carbon or nitrogen in a concentration greater than an unavoidable impurity level concentration.
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16. A nonvolatile memory device, comprising:
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at least one nonvolatile memory cell which comprises a silicon, germanium or silicon-germanium p-i-n diode in which at least an intrinsic region is doped with at least one of nitrogen or carbon in a concentration of at least 1×
1017 cm3; anda first electrode and a second electrode electrically contacting the at least one nonvolatile memory cell. - View Dependent Claims (17, 18, 19, 20)
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Specification