METHOD OF FORMING RUTHENIUM FILM FOR METAL WIRING STRUCTURE
First Claim
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1. A method of depositing a ruthenium(Ru) thin film on a substrate in a reaction chamber, comprising:
- (i) supplying a gas of a ruthenium precursor into the reaction chamber so that the gas of the ruthenium precursor is adsorbed onto the substrate, said ruthenium precursor a ruthenium complex containing a non-cyclic dienyl;
(ii) supplying an excited reducing gas into the reaction chamber to activate the ruthenium precursor adsorbed onto the substrate; and
(iii) repeating steps (i) and (ii), thereby forming a ruthenium thin film on the substrate.
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Abstract
A method of depositing a ruthenium(Ru) thin film on a substrate in a reaction chamber, includes: (i) supplying a gas of a ruthenium precursor into the reaction chamber so that the gas of the ruthenium precursor is adsorbed onto the substrate, wherein the ruthenium precursor a ruthenium complex contains a non-cyclic dienyl; (ii) supplying an excited reducing gas into the reaction chamber to activate the ruthenium precursor adsorbed onto the substrate; and (iii) repeating steps (i) and (ii), thereby forming a ruthenium thin film on the substrate.
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Citations
22 Claims
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1. A method of depositing a ruthenium(Ru) thin film on a substrate in a reaction chamber, comprising:
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(i) supplying a gas of a ruthenium precursor into the reaction chamber so that the gas of the ruthenium precursor is adsorbed onto the substrate, said ruthenium precursor a ruthenium complex containing a non-cyclic dienyl; (ii) supplying an excited reducing gas into the reaction chamber to activate the ruthenium precursor adsorbed onto the substrate; and (iii) repeating steps (i) and (ii), thereby forming a ruthenium thin film on the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification