METHODS AND APPARATUS FOR DEPOSITING A UNIFORM SILICON FILM WITH FLOW GRADIENT DESIGNS

• US 20090000551A1
• Filed: 09/04/2008
• Published: 01/01/2009
• Est. Priority Date: 06/07/2007
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Choi, Soo Young, Won, Tae Kyung, White, John M.
• Application Number:
  US12/204,717
• Publication Number:
  US 20090000551A1
• Time in Patent Office: Days
• US Class Current: 118/723.R
• CPC Class Codes: C23C 16/24 Deposition of silicon only
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/5096 Flat-bed apparatus
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow

Abstract

Methods and apparatus having a flow gradient created from a gas distribution plate are provided. In one embodiment, the method and apparatus are particularly useful for, but not limited to, depositing a silicon film for solar cell applications. The apparatus for depositing a uniform film for solar cell applications includes a processing chamber, and a quadrilateral gas distribution plate disposed in the processing chamber and having at least four corners separated by four sides. The gas distribution plate further includes a first plurality of chokes formed through the gas distribution plate, the first plurality of chokes located in the corners, and a second plurality of chokes formed through the gas distribution plate, the second plurality of chokes located along the sides of the gas distribution plate between the corner regions, wherein the first plurality of chokes have a greater flow resistance than that of the second plurality of chokes.

Claims

1-20. -20. (canceled)

21. A substrate processing apparatus, comprising:

a processing chamber having a bottom, side walls, and a chamber lid defining a process volume;

a substrate support disposed within the process volume of the processing chamber;

a quadrilateral gas distribution plate having an upstream side and a downstream side disposed within the processing chamber, wherein the quadrilateral gas distribution plate has corner regions with a first plurality of orifices extending from the upstream side to the downstream side and edge regions with a second plurality of orifices extending from the upstream side to the downstream side, and wherein each of the first plurality of orifices has a greater flow resistance than each of the second plurality of orifices.

22. The apparatus of claim 21, wherein each of the second plurality of orifices has a larger diameter than each of the first plurality of orifices.

23. The apparatus of claim 21, wherein each orifice has a first cylindrical shape and a second cylindrical shape having a greater diameter than the first cylindrical shape.

24. The apparatus of claim 23, wherein the first cylindrical shape extends from the upstream side of the quadrilateral gas distribution plate for a first distance and the second cylindrical shape extends from the downstream side of the first cylindrical shape for a second distance.

25. The apparatus of claim 24, wherein the first distance of each of the first plurality of orifices is greater than the first distance of each of the second plurality of orifices.

26. The apparatus of claim 25, wherein the sum of the first and second distances equals the distance between the upstream side and the downstream side of the quadrilateral gas distribution plate.

27. The apparatus of claim 21, wherein each orifice has a first cylindrical shape extending downstream from the upstream side of the gas distribution plate for a first distance and a second cylindrical shape extending downstream from the first cylindrical shape for a second distance, and wherein the first cylindrical shape has a different diameter than the second cylindrical shape.

28. The apparatus of claim 27, wherein the first cylindrical shape has a larger diameter than the second cylindrical shape.

29. The apparatus of claim 28, wherein the second distance of the first plurality of orifices is greater than the second distance of the second plurality of orifices.

30. The apparatus of claim 29, wherein each orifice has a conical shape extending from the second cylindrical shape to the downstream side of the quadrilateral gas distribution plate.

31. The apparatus of claim 28, wherein the first cylindrical shape of each of the second plurality of orifices has a larger diameter than the first cylindrical shape of each of the first plurality of orifices.

32. A substrate processing apparatus, comprising:

a processing chamber having a bottom, side walls, and a chamber lid defining a process volume;

a substrate support disposed within the process volume of the processing chamber;

a quadrilateral gas distribution plate having an upstream side and a downstream side disposed within the processing chamber, wherein the quadrilateral gas distribution plate has corner regions with a first plurality of chokes, edge regions with a second plurality of chokes, and a central region with a third plurality of chokes, wherein each of the first plurality of chokes has a greater flow resistance than each of the second plurality of chokes, and wherein each of the second plurality of chokes has a greater flow resistance than each of the third plurality of chokes.

33. The apparatus of claim 32, wherein each choke has a first cylindrical portion that extends a first distance downstream from the upstream side of the gas distribution plate, and wherein the first distance of each of the first plurality of chokes is greater than the first distance of each of the second plurality of chokes.

34. The apparatus of claim 33, wherein each choke has second portion extending from the downstream side of the first cylindrical portion to the downstream side of the quadrilateral gas distribution plate.

35. The apparatus of claim 34, wherein the diameter of each first cylindrical portion is smaller than a diameter of each second portion extending downstream therefrom.

36. The apparatus of claim 32, wherein each choke has a first cylindrical shape extending from the upstream side of the gas distribution plate a first distance toward the downstream side and a second cylindrical shape extending from the downstream side of the first cylindrical shape a second distance toward the downstream side of the gas distribution plate, wherein the diameter of each of the second cylindrical shape is smaller than a diameter of the first cylindrical shape.

37. The apparatus of claim 36, wherein the second distance of the first plurality of chokes is greater than the second distance of the first plurality of chokes.

38. A method for depositing a film on a substrate in a process chamber, comprising:

placing a substrate onto a substrate support assembly in the process chamber having a gas distribution plate facing the substrate support assembly;

flowing process gas through corner regions of the gas distribution plate toward the substrate at a rate less than a rate of process gas flowing through edge regions of the gas distribution plate; and

depositing a film on the substrate from the process gas.

39. The method of claim 38, wherein the rate of process gas flowing through the edge regions of the gas distribution plate is less than a rate of process gas flowing through a central region of the gas distribution plate.

40. The method of claim 39, wherein flowing the process gas further comprises providing greater flow resistance in the corner regions of the gas distribution plate than in edge regions of the gas distribution plate.