SEMICONDUCTOR LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND LAMP

• US 20090001407A1
• Filed: 08/27/2008
• Published: 01/01/2009
• Est. Priority Date: 02/17/2006
• Status: Abandoned Application

• Current Assignee: Showa Denko KK
• Original Assignee: Showa Denko KK
• Inventors: FUKUNAGA, Naoki, OSAWA, Hiroshi
• Application Number:
  US12/199,764
• Publication Number:
  US 20090001407A1
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/405 Reflective materials

Abstract

There is provided a semiconductor light-emitting device having excellent light extraction efficiency, a manufacturing method thereof, and a lamp. A semiconductor light-emitting device 1 includes: an n-type semiconductor layer 12, a light-emitting layer 13, a p-type semiconductor layer 14, a titanium oxide-based conductive film layer 15, and a translucent film layer 16 laminated in this order, and a concavo-convex surface is formed on at least a part of the surface of the titanium oxide-based conductive film layer 15.

Claims

1. A semiconductor light-emitting device comprising an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a titanium oxide-based conductive film layer, and a translucent conductive film layer laminated in this order, wherein

a concavo-convex surface is formed on at least a part of the surface of said titanium oxide-based conductive film layer.

2. The semiconductor light-emitting device according to claim 1, wherein said titanium oxide-based conductive film layer is of an oxide comprising Ti and at least one element selected from the group consisting of Ta, Nb, V, Mo, W, and Sb.

3. The semiconductor light-emitting device according to claim 1, wherein the refractive index of said translucent conductive film layer is within a range of 1.6 to 2.5.

4. The semiconductor light-emitting device according to claim 1, wherein said translucent conductive film layer is of a material comprising at least one selected from the group consisting of ITO (In₂O_3-SnO₂), AZO (ZnO—

Al₂O₃), IZO (In₂O₃—

ZnO), and GZO (ZnO—

Ga₂O₃).

5. The semiconductor light-emitting device according to claim 1, wherein said translucent conductive film layer is formed so as to cover said titanium oxide-based conductive film layer.

6. The semiconductor light-emitting device according to claim 1, wherein a photocatalytic reaction-prevention layer is additionally formed so as to cover said titanium oxide-based conductive film layer and said translucent conductive film layer.

7. The semiconductor light-emitting device according to claim 6, wherein the refractive index of said photocatalytic reaction-prevention layer is within a range of 1.5 to 2.0.

8. The semiconductor light-emitting device according to claim 6, wherein said photocatalytic reaction-prevention layer is made of silicon oxide or aluminum oxide.

9. The semiconductor light-emitting device according to claim 1, wherein the semiconductor light-emitting device is a nitride-based semiconductor light-emitting device.

10. The semiconductor light-emitting device according to claim 9, wherein said nitride-based semiconductor light-emitting device is a GaN-based semiconductor light-emitting device.

16. A lamp comprising the semiconductor light-emitting device according to claim 1.

11. A method of manufacturing a semiconductor light-emitting device comprising an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a titanium oxide-based conductive film layer, and a translucent conductive film layer laminated in this order,

the method comprising forming a concavo-convex surface on at least a part of the surface of said titanium oxide-based conductive film layer.

12. The method of manufacturing a semiconductor light-emitting device according to claim 11, wherein said translucent conductive film layer is formed so as to cover said titanium oxide-based conductive film layer.

13. The method of manufacturing a semiconductor light-emitting device according to claim 11, wherein a photocatalytic reaction-prevention layer is additionally formed so as to cover said titanium oxide-based conductive film layer and said translucent conductive film layer.

14. The method of manufacturing a semiconductor light-emitting device according to claim 13, wherein said photocatalytic reaction-prevention layer is formed by a sputtering method or a CVD method.

15. The method of manufacturing a semiconductor light-emitting device according to claim 14, wherein said photocatalytic reaction-prevention layer is formed by the CVD method using aluminum oxide.

17. A lamp comprising a semiconductor light-emitting device obtained by the manufacturing method according to claim 11.