SEMICONDUCTOR LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND LAMP
First Claim
1. A semiconductor light-emitting device comprising an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a titanium oxide-based conductive film layer, and a translucent conductive film layer laminated in this order, whereina concavo-convex surface is formed on at least a part of the surface of said titanium oxide-based conductive film layer.
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Accused Products
Abstract
There is provided a semiconductor light-emitting device having excellent light extraction efficiency, a manufacturing method thereof, and a lamp. A semiconductor light-emitting device 1 includes: an n-type semiconductor layer 12, a light-emitting layer 13, a p-type semiconductor layer 14, a titanium oxide-based conductive film layer 15, and a translucent film layer 16 laminated in this order, and a concavo-convex surface is formed on at least a part of the surface of the titanium oxide-based conductive film layer 15.
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Citations
17 Claims
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1. A semiconductor light-emitting device comprising an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a titanium oxide-based conductive film layer, and a translucent conductive film layer laminated in this order, wherein
a concavo-convex surface is formed on at least a part of the surface of said titanium oxide-based conductive film layer.
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11. A method of manufacturing a semiconductor light-emitting device comprising an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a titanium oxide-based conductive film layer, and a translucent conductive film layer laminated in this order,
the method comprising forming a concavo-convex surface on at least a part of the surface of said titanium oxide-based conductive film layer.
Specification