Channel layer for a thin film transistor, thin film transistor including the same, and methods of manufacturing the same
First Claim
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1. A channel layer for a thin film transistor comprising IZO (indium zinc oxide) doped with a transition metal.
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Abstract
Provided is a channel layer for a thin film transistor, a thin film transistor and methods of forming the same. A channel layer for a thin film transistor may include IZO (indium zinc oxide) doped with a transition metal. A thin film transistor may include a gate electrode and the channel layer formed on a substrate, a gate insulating layer formed between the gate electrode and channel layer, and a source electrode and a drain electrode which contact ends of the channel layer.
14 Citations
25 Claims
- 1. A channel layer for a thin film transistor comprising IZO (indium zinc oxide) doped with a transition metal.
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14. A method of forming a channel layer used in a thin film transistor comprising:
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providing a semiconductor material layer for forming a channel; and patterning the semiconductor material layer to form a channel layer, wherein the semiconductor material layer is an IZO layer doped with a transition metal. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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Specification