Display device and method for manufacturing the same

• US 20090001469A1
• Filed: 06/24/2008
• Published: 01/01/2009
• Est. Priority Date: 06/29/2007
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Sato, Yurika, Shimomura, Akihisa, Yoshida, Yasunori
• Granted Patent: US 8,431,451 B2
• Time in Patent Office: Days
• US Class Current: 257/347
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 29/66772 Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates H01L29/66666 takes precedence; thin film FinFETs H01L29/66795

Abstract

A semiconductor substrate is formed into a regular hexagon or a shape similar to the regular hexagon. The semiconductor substrate is bonded to and separated from a large-area substrate. Moreover, layout is designed so that a boundary of bonded semiconductors is located in a region which is removed by etching when patterning is performed by photolithography or the like.

Claims

1. A display device comprising a display portion,

wherein:

the display portion includes a plurality of pixels,

the plurality of pixels are classified into pixel groups of m columns (m is a positive integer) including the same signal line,

the pixels are included in the pixel group, each of the pixels including a semiconductor region at approximately the same position in each region of the pixels,

the pixel group is arranged so as to have a distance of a pixel pitch X in a direction parallel to a scan line from an adjacent pixel group,

the position of the semiconductor region in the region of the pixel included in the pixel group is different from the position of the semiconductor region in the region of the pixel included in the adjacent pixel group by X/2, and

the semiconductor region has single crystallinity or crystallinity similar to single crystallinity.

2. The display device according to claim 1, wherein in each of the plurality of pixels, a ratio of a shorter side to a longer side of the region is 1:

√

3.

3. The display device according to claim 1, wherein the semiconductor regions in the display portion are arranged at an angle of approximately 30°

with respect to a direction parallel to the signal line.

9. The display device according to claim 1, further comprising a pixel electrode and an insulating film,

wherein the pixel electrode is provided in contact with the insulating film, and

wherein the insulating film is a planarization film including an organic material.

4. A display device comprising a display portion,

wherein:

the display portion includes a plurality of pixels,

the plurality of pixels are classified into pixel groups of n rows (n is a positive integer) including the same scan line,

the pixels are included in the pixel group, each of the pixels including a semiconductor region at approximately the same position in each region of the pixels,

the pixel group is arranged so as to have a distance of a pixel pitch Y in a direction parallel to a signal line from an adjacent pixel group,

the position of the semiconductor region in the region of the pixel included in the pixel group is different from the position of the semiconductor region in the region of the pixel included in the adjacent pixel group by Y/2, and

the semiconductor region has single crystallinity or crystallinity similar to single crystallinity.

5. The display device according to claim 4, wherein in each of the plurality of pixels, a ratio of a shorter side to a longer side of the region is √

3/2;

1.

6. The display device according to claim 4, wherein the semiconductor regions in the display portion are arranged at an angle of approximately 30°

with respect to a direction parallel to the signal line.

7. The display device according to claim 4, wherein the semiconductor regions in the display portion are arranged at an angle of approximately 60°

with respect to a direction parallel to the signal line.

10. The display device according to claim 4, further comprising a pixel electrode and an insulating film,

wherein the pixel electrode is provided in contact with the insulating film, and

wherein the insulating film is a planarization film including an organic material.

8. A display device comprising a plurality of semiconductor regions,

wherein:

each of the plurality of semiconductor regions has single crystallinity or crystallinity similar to single crystallinity,

the plurality of semiconductor regions are defined into a plurality of groups of semiconductor regions having the same crystal orientation, and

boundaries of the plurality of groups are such that a plurality of regular hexagons are arranged.

11. The display device according to claim 8, further comprising a pixel electrode and an insulating film,

wherein the pixel electrode is provided in contact with the insulating film, and

wherein the insulating film is a planarization film including an organic material.

12. A method of manufacturing a display device comprising:

cutting out at least one wafer to form a first hexagonal semiconductor substrate and a second hexagonal semiconductor substrate which is the nearest to the first hexagonal semiconductor substrate;

setting an imaginary defined line by which a rectangular substrate is defined into the number of display portions formed over the rectangular substrate; and

arranging and attaching the first and second hexagonal semiconductor substrates to the rectangular substrate so that one side of the first hexagonal semiconductor substrate is parallel to the imaginary defined line and the one side of the first hexagonal semiconductor substrate is parallel to one side of the second hexagonal semiconductor substrate,

wherein the imaginary defined line is an outline of the display portion.

15. The method of manufacturing the display device according to claim 12, wherein one side of the rectangular substrate is one meter or more.

13. A method of manufacturing a display device comprising:

cutting out at least one wafer to form first and second hexagonal semiconductor substrates;

arranging the first and second hexagonal semiconductor substrates over a rectangular substrate to be attached to the rectangular substrate;

forming a plurality of semiconductor regions; and

forming a display portion provided with a plurality of pixels, each of the pixels including at least one of the semiconductor regions and a pixel electrode electrically connected to the one of the semiconductor regions,

wherein the plurality of semiconductor regions are formed in such a manner that the first and second hexagonal semiconductor substrates are attached to the rectangular substrate and a boundary region of the first and second hexagonal semiconductor substrates is provided between the one of the semiconductor regions and a semiconductor region next to the one of the semiconductor regions.

14. The method of manufacturing the display device according to claim 13, wherein the pixels in the display portion are arranged in delta pattern.

16. The method of manufacturing the display device according to claim 13, wherein one side of the rectangular substrate is one meter or more.