SILICON PHOTODETECTOR AND METHOD FOR FORMING THE SAME

• US 20090001489A1
• Filed: 06/26/2007
• Published: 01/01/2009
• Est. Priority Date: 06/26/2007
• Status: Abandoned Application

• Current Assignee: National Central University
• Original Assignee: National Central University
• Inventors: Liu, Yu-Chang, Huang, Wei-Kuo, Hsin, Yue-Ming
• Application Number:
  US11/768,721
• Publication Number:
  US 20090001489A1
• Time in Patent Office: Days
• US Class Current: 257/431
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 31/035281 Shape of the body
• CPC Class Codes: H01L 31/103 the potential barrier being of the PN homojunction type
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

A structure of a silicon photodetector and a method for forming the same by using the conventional CMOS semiconductor manufacturing process and micro-electromechanical system manufacturing process, in which the micro-electromechanical system manufacturing process (lateral etching process) is applied for elimination of effect and interference caused by a substrate of the silicon photodetector after optical absorption thereof, thereby greatly improving the response speed of the silicon photodetector. This can be done only by applying the lateral etching process onto a portion of the substrate of the silicon photodetector after the semiconductor manufacturing process is finished, through which slow diffusion carriers produced from the optical absorption of the substrate can be effectively reduced and the response speed is thus enhanced.

Claims

1. A method for fabricating a silicon photodetector, comprising the steps of:

forming a prototype of the silicon photodetector by using a traditional process for forming a complemented metal oxide semiconductor (CMOS) process; and

applying a process for forming a micro-electromechanical system manufacturing process onto the prototype to eliminate a substrate formed under a bottom of the prototype, wherein the micro-electromechanical system process is a lateral etching process.

2. A silicon photodetector formed by the method as claimed in claim 1, forming a prototype of the silicon photodetector by using a traditional process for forming a complemented metal oxide semiconductor (CMOS) process;

and

applying a process for forming a micro-electromechanical system process onto the prototype to eliminate a substrate formed under a bottom of the prototype, wherein the micro-electromechanical system process is a lateral etching process.

3. The silicon photodetector as claimed in claim 2, wherein the substrate under the prototype of the silicon photodetector is only and right etched up to an extent where a notch formed by the lateral etching process can be endured by the substrate.