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SILICON PHOTODETECTOR AND METHOD FOR FORMING THE SAME

  • US 20090001489A1
  • Filed: 06/26/2007
  • Published: 01/01/2009
  • Est. Priority Date: 06/26/2007
  • Status: Abandoned Application
First Claim
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1. A method for fabricating a silicon photodetector, comprising the steps of:

  • forming a prototype of the silicon photodetector by using a traditional process for forming a complemented metal oxide semiconductor (CMOS) process; and

    applying a process for forming a micro-electromechanical system manufacturing process onto the prototype to eliminate a substrate formed under a bottom of the prototype, wherein the micro-electromechanical system process is a lateral etching process.

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