Optoelectronic Component that Emits Electromagnetic Radiation and Illumination Module

• US 20090001490A1
• Filed: 07/21/2005
• Published: 01/01/2009
• Est. Priority Date: 07/26/2004
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Grotsch, Stefan, Bogner, Georg, Kromotis, Patrick, Engl, Moritz
• Granted Patent: US 8,071,990 B2
• Time in Patent Office: Days
• US Class Current: 257/432
• CPC Class Codes: F21S 41/143 the main emission direction of the LED being parallel to the optical axis of the illuminating device
• CPC Class Codes: F21S 41/151 arranged in one or more lines
• CPC Class Codes: F21S 41/176 Light sources where the light is generated by photoluminescent material spaced from a primary light generating element
• CPC Class Codes: F21Y 2115/10 Light-emitting diodes [LED]
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

An optoelectronic component emitting electromagnetic radiation, comprising a housing body which has a cavity, the cavity being fashioned trenchlike and in the cavity a plurality of semiconductor chips being arranged in a linear arrangement. Two neighboring semiconductor chips have a distance from one another which is less than or equal to one-and-a-half lateral edge lengths of the semiconductor chips and greater than or equal to 0 μm. In addition, an illumination module comprising such a component is disclosed.

Claims

1. An optoelectronic component emitting electromagnetic radiation, comprising:

a housing body which has a trenchlike cavity therein;

a plurality of semiconductor chips arranged linearly within said cavity; and

wherein two neighboring semiconductor chips have a distance from one another which is less than or equal to 1.5-times the lateral edge length of the semiconductor chips and greater than or equal to 0 μ

m.

2. The optoelectronic component as claimed in claim 1, wherein two neighboring semiconductor chips have a distance from one another of less than or equal to 300 μ

m and greater than or equal to 0 μ

m.

3. The optoelectronic component as claimed in claim 2, wherein two neighboring semiconductor chips have a distance from one another of less than or equal to 100 μ

m and greater than or equal to 0 μ

m.

4. The optoelectronic component as claimed in claim 1, wherein the semiconductor chips are arranged on a printed circuit board or on a lead frame.

5. The optoelectronic component as claimed in claim 1, wherein the housing body has on one side along the arrangement of the semiconductor chips an inner wall delimiting the cavity, at least a section of the inner wall being constructed as a screening wall which is reflective for at least one spectral band of the electromagnetic radiation.

6. The optoelectronic component as claimed in claim 5, wherein the screening wall extends essentially at an angle of greater than or equal to 80°

and less than or equal to 110°

with respect to an mounting plane of the semiconductor chips.

7. The optoelectronic component as claimed in claim 5, wherein the semiconductor chips are arranged at a distance of less than or equal to 1 mm and greater than or equal to 0 mm from the screening wall.

8. The optoelectronic component as claimed in claim 5, wherein the semiconductor chips are arranged at a distance of less than or equal to 500 μ

m and greater than or equal to 0 μ

m from the screening wall.

9. The optoelectronic component as claimed in claim 8, wherein the semiconductor chips are arranged at a distance of less than or equal to 150 μ

m and greater than or equal to 0 μ

m from the screening wall.

10. The optoelectronic component as claimed in claim 1, wherein the arrangement of semiconductor chips has a first and a second end, wherein at the first end, at least two semiconductor chips are arranged along a first straight line which is inclined with respect to a second straight line along which at least two semiconductor chips are arranged at the second end.

11. The optoelectronic component as claimed in claim 10, wherein the first straight line is inclined with respect to the second straight line by an angle of inclination of less than or equal to 20°

and greater than or equal to 10°

.

12. The optoelectronic component as claimed in claim 1, wherein at least one optical element is provided which reduces a divergence of the electromagnetic radiation and which is jointly allocated to the semiconductor chips.

13. The optoelectronic component as claimed in claim 12, wherein the optical element is a non-imaging optical concentrator, wherein a radiation entry of the optical element is the actual concentrator exit so that the radiation, compared with the usual application of a concentrator for focusing, passes through it in the reverse direction and is thus not concentrated but leaves the concentrator with reduced divergence through a radiation exit of the optical element.

14. The optoelectronic component as claimed in claim 13, wherein the radiation entry has a radiation entry area or a radiation entry opening which has a width of less than or equal to 1.5-times an edge length of the semiconductor chips.

15. The optoelectronic component as claimed in claim 13, wherein the electromagnetic radiation leaves the optical element in a radiation cone which has an aperture angle between 0 and 30°

, including the limits, in a plane perpendicular to a line along which the semiconductor chips are arranged.

16. The optoelectronic component as claimed in claim 13, wherein the concentrator is a CPC-, CEC- or CHC-type concentrator.

17. The optoelectronic component as claimed claim 13, wherein the concentrator has side walls which connect the radiation entry to the radiation exit and which are constructed in such a manner that direct connecting lines between the radiation entry and the radiation exit, extending on the side walls, are essentially straight.

18. The optoelectronic component as claimed in claim 13, wherein the concentrator has a basic body which defines a cavity and the inner wall of which is reflective at least for a spectral part-band of the electromagnetic radiation.

19. The optoelectronic component as claimed in claim 13, wherein the concentrator is a dielectric concentrator, the basic body of which is a solid body consisting of a dielectric material having a suitable index of refraction so that radiation coupled in via the radiation entry is reflected by total reflection on the lateral boundary faces of the solid body to the surrounding medium which connect the radiation entry to the radiation exit.

20. The optoelectronic component as claimed in claim 19, wherein the radiation exit is a boundary face of the solid body domed in the manner of a lens.

21. The optoelectronic component as claimed in claim 13, wherein a gap exists between the semiconductor chips and the radiation entry of the concentrator.

22. The optoelectronic component as claimed in claim 21, wherein the gap is largely free of solid or liquid material.

23. The optoelectronic component as claimed in claim 1, wherein the component has a luminescence conversion element.

24. The optoelectronic component as claimed in claim 23, wherein the luminescence conversion element is intermixed in a casting compound transparent to radiation, by means of which the semiconductor chips are encapsulated.

25. The optoelectronic component as claimed in claim 24, wherein the casting compound has a thickness of less than or equal to 200 μ

m and greater than or equal to 5 μ

m over the semiconductor chips.

26. The optoelectronic component as claimed in claim 23, characterized in that wherein the luminescence conversion element is applied to the semiconductor chips.

27. The optoelectronic component as claimed in claim 23, wherein a carrier body transparent to radiation, on which the luminescence conversion element is applied, is arranged on the semiconductor chips.

28. The optoelectronic component as claimed in claim 27, wherein the luminescence conversion element is arranged on a side of the carrier body facing away from the semiconductor chips.

29. The optoelectronic component as claimed in claim 1, wherein the component has a diffuser material.

30. An illumination module, comprising an optoelectronic component as claimed in claim 1.

31. The illumination module as claimed in claim 30, wherein the illumination module is a headlamp module.

32. The illumination module as claimed in claim 30, wherein an overvoltage protection is provided for the component.

33. The illumination module as claimed in claim 32, wherein the overvoltage protection comprises at least one varistor.