METAL INSULATOR METAL CAPACITOR AND METHOD OF MANUFACTURING THE SAME
First Claim
1. An apparatus comprising:
- a lower metal layer including a first lower metal layer and a second lower metal layer formed on a semiconductor substrate;
an upper metal layer including a first upper metal layer and a second upper metal layer formed on the lower metal layer;
a capacitor dielectric layer formed between the lower metal layer and the upper metal layer;
a first bonding metal layer formed on the upper metal layer and a second bonding metal layer formed on the lower metal layer;
a first connection wiring formed between the upper metal layer and the first bonding metal layer for directly connect the upper metal layer to the first bonding metal layer; and
a second connection wiring formed between the lower metal layer and the second bonding metal layer for directly connecting the lower metal layer to the second bonding metal layer.
1 Assignment
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Accused Products
Abstract
A metal-insulator-metal (MIM) capacitor may include a lower metal layer including a lower metal layer including a first lower metal layer and a second lower metal layer formed on a semiconductor substrate, an upper metal layer including a first upper metal layer and a second upper metal layer formed on the lower metal layer, a capacitor dielectric layer formed between the lower metal layer and the upper metal layer, a first bonding metal layer formed on the upper metal layer and a second bonding metal layer formed on the lower metal layer, a first connection wiring formed between the upper metal layer and the first bonding metal layer for directly connect the upper metal layer to the first bonding metal layer, and a second connection wiring formed between the lower metal layer and the second bonding metal layer for directly connecting the lower metal layer to the second bonding metal layer.
16 Citations
20 Claims
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1. An apparatus comprising:
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a lower metal layer including a first lower metal layer and a second lower metal layer formed on a semiconductor substrate; an upper metal layer including a first upper metal layer and a second upper metal layer formed on the lower metal layer; a capacitor dielectric layer formed between the lower metal layer and the upper metal layer; a first bonding metal layer formed on the upper metal layer and a second bonding metal layer formed on the lower metal layer; a first connection wiring formed between the upper metal layer and the first bonding metal layer for directly connect the upper metal layer to the first bonding metal layer; and a second connection wiring formed between the lower metal layer and the second bonding metal layer for directly connecting the lower metal layer to the second bonding metal layer. - View Dependent Claims (2, 3)
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4. A method comprising:
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forming a lower metal layer including a first lower metal layer and a second lower metal layer on a semiconductor substrate; and
thenforming a capacitor dielectric layer on the lower metal layer; and
thenforming an upper metal layer first upper metal layer and a second upper metal layer on a portion of the capacitor dielectric layer; and
thenforming a first silicon layer to cover the lower metal layer and the upper metal layer; and
thenforming a second silicon layer on the semiconductor substrate including the first silicon layer to level the semiconductor substrate; and
thenforming a first wiring pattern by etching the first and second silicon layers and the capacitor dielectric layer to expose a portion of the lower metal layer; and
thenforming a second wiring pattern by etching the first and second silicon layers to expose a portion of the upper metal layer; and
thenforming a third silicon layer on the second silicon layer; and
thenforming third and fourth wiring patterns by etching the third silicon layer in regions corresponding to the lower metal layer and the upper metal layer; and
thensimultaneously burying a metal material in the first and second wiring patterns to form connection wirings and a metal material in the third and fourth wiring patterns to form bonding metal layers. - View Dependent Claims (5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 18, 19)
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15. A method comprising:
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sequentially forming a first metal layer on a semiconductor substrate and a second metal layer on the first metal layer; and
thenforming a first silicon layer on the second metal layer; and
thensequentially forming a third metal layer on the capacitor dielectric layer and a fourth metal layer on the third metal layer; and
thenforming a second silicon layer on the semiconductor substrate including the first metal layer, the second metal layer, the first silicon layer, the third metal layer and the fourth metal layers; and
thenforming a third silicon layer having a planarized surface on the semiconductor substrate including the second silicon layer; and
thenperforming a first etching process exposing the second metal layer and the fourth metal layer; and
thenforming a fourth silicon layer on the second silicon layer and the exposed second metal layer and the exposed fourth metal layer; and
thenperforming a second etching process exposing the second metal layer, the fourth metal layer and the third silicon layer; and
thensimultaneously forming a first connection wiring connected to the fourth metal layer, a fifth metal layer connected to the first connection wiring, a second connection wiring connected to the second metal layer and sixth metal layer connected to the second connection wiring. - View Dependent Claims (16, 17, 20)
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Specification