METHOD FOR PROGRAMMING MULTI-LEVEL CELL FLASH MEMORY DEVICE
First Claim
1. A method for programming a multi-level cell (MLC) flash memory device, the method comprising:
- performing an auxiliary program operation on a plurality of memory cells to be programmed, such that a majority of the memory cells have a positive threshold voltage;
programming a least significant bit (LSB) of a particular memory cell to a predetermined level;
sensing data of the programmed LSB; and
programming a most significant bit (MSB) of the particular memory cell to a predetermined level according to the sensed data of the LSB.
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Abstract
A method for programming an MLC flash memory device minimizes interference between adjacent cells during a program operation, such that threshold voltage distribution becomes narrow and uniform. According to the method, an auxiliary program operation is performed on memory cells to be programmed, such that a majority of the memory cells have a positive threshold voltage. An LSB of a particular memory cell is programmed to a predetermined level, and data of the programmed LSB is sensed. An MSB of the particular memory cell is programmed to a predetermined level according to the sensed data of the LSB.
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Citations
12 Claims
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1. A method for programming a multi-level cell (MLC) flash memory device, the method comprising:
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performing an auxiliary program operation on a plurality of memory cells to be programmed, such that a majority of the memory cells have a positive threshold voltage; programming a least significant bit (LSB) of a particular memory cell to a predetermined level; sensing data of the programmed LSB; and programming a most significant bit (MSB) of the particular memory cell to a predetermined level according to the sensed data of the LSB. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for programming an MLC flash memory device including a plurality of memory cells, the method comprising:
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programming an LSB of a particular memory cell of a plurality of memory cells to a predetermined level; performing an auxiliary program such that a majority of the plurality of memory cells have a positive threshold voltage, the plurality of memory cells being programmed from an erased state to a first program level; sensing LSB data of the particular memory cell; and programming an MSB of the particular memory cell to a predetermined level according to the sensed LSB data. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification