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MEMORY TEST MODE FOR CHARGE RETENTION TESTING

  • US 20090003099A1
  • Filed: 06/28/2007
  • Published: 01/01/2009
  • Est. Priority Date: 06/28/2007
  • Status: Active Grant
First Claim
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1. A method, comprising:

  • disabling an autonomous refresh mode of a dynamic random access memory circuit on a die which is adapted to autonomously refresh the memory cells of the memory circuit at a first autonomous refresh mode rate;

    enabling a test refresh mode;

    refreshing said memory cells during said test refresh mode at a second test refresh mode rate which is higher than said first autonomous refresh mode rate and is a function of the output of a timer circuit external to the die of the memory circuit; and

    testing said memory circuit wherein the results of said testing is a function of the charge retention of said memory cells.

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