Defect analysis
First Claim
Patent Images
1. A method to analyze a semiconductor wafer, comprising:
- extracting inline defect data from a data source;
counting a total number of inline defects and end-of-line defects;
terminating the analysis when the total number of inline defects and end-of-line defects exceeds a threshold; and
mapping the inline defects onto the end-of-line defects when the total number of inline defects and end-of-line defects is less than a threshold.
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Abstract
In one embodiment, a method to analyze a semiconductor wafer comprises extracting inline defect data from a data source, counting a total number of inline defects and end-of-line defects, terminating the analysis when the total number of inline defects and end-of-line defects exceeds a threshold, and mapping the inline defects onto the end-of-line defects when the total number of inline defects and end-of-line defects is less than a threshold.
17 Citations
7 Claims
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1. A method to analyze a semiconductor wafer, comprising:
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extracting inline defect data from a data source; counting a total number of inline defects and end-of-line defects; terminating the analysis when the total number of inline defects and end-of-line defects exceeds a threshold; and mapping the inline defects onto the end-of-line defects when the total number of inline defects and end-of-line defects is less than a threshold. - View Dependent Claims (2, 3, 4, 5)
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6. A method to classify defects in a semiconductor device, comprising:
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calculating a set of reference currents for the semiconductor device; forming a vector from one or more measured currents for a defect calculating a negative distance and a positive distance from the set of reference currents; and classifying the defect based on the vector. - View Dependent Claims (7)
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Specification