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METHOD FOR PRODUCING SHALLOW TRENCH ISOLATION

  • US 20090004812A1
  • Filed: 06/29/2007
  • Published: 01/01/2009
  • Est. Priority Date: 06/29/2007
  • Status: Abandoned Application
First Claim
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1. A method for producing shallow trench isolation, comprising:

  • (1) forming a plurality of first grooves on a silicon substrate with a mask etching method, wherein the silicon substrate comprises a silicon layer, an oxide layer and a first polysilicon layer;

    (2) conducting oxidation process on periphery of the first grooves to form a plurality of second grooves, wherein an insulating layer is formed at an inner peripheral portion of the second grooves via the oxidation process. The depth of the insulating layer on the periphery of the first polysilicon layer formed by the oxidation process is larger than the depths of the insulating layers that are formed on the silicon layer and on the oxidation layer through the oxidation process;

    (3) filling high density plasma oxide layer into the second grooves to form a plurality of high density plasma oxide layer fillers;

    (4) removing the first polysilicon layer by etching;

    (5) covering the silicon substrate with a second polysilicon layer by a deposition; and

    (6) polishing the second polysilicon layer to form a plurality of self-aligned floating gates.

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