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SALICIDATION PROCESS USING ELECTROLESS PLATING TO DEPOSIT METAL AND INTRODUCE DOPANT IMPURITIES

  • US 20090004851A1
  • Filed: 06/29/2007
  • Published: 01/01/2009
  • Est. Priority Date: 06/29/2007
  • Status: Abandoned Application
First Claim
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1. A method for forming a semiconductor device comprising:

  • providing a semiconductor substrate with a semiconductor device thereon, said semiconductor device having exposed silicon surfaces and exposed dielectric surfaces;

    positioning said semiconductor substrate in an electroless plating solution that includes at least metal ions therein, andurging a metal film of said metal ions to selectively deposit only on said exposed silicon surfaces and not on said dielectric surfaces.

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