SALICIDATION PROCESS USING ELECTROLESS PLATING TO DEPOSIT METAL AND INTRODUCE DOPANT IMPURITIES
First Claim
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1. A method for forming a semiconductor device comprising:
- providing a semiconductor substrate with a semiconductor device thereon, said semiconductor device having exposed silicon surfaces and exposed dielectric surfaces;
positioning said semiconductor substrate in an electroless plating solution that includes at least metal ions therein, andurging a metal film of said metal ions to selectively deposit only on said exposed silicon surfaces and not on said dielectric surfaces.
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Abstract
A selective electroless plating operation provides for the selective deposition of a metal film only on exposed silicon surfaces of a semiconductor substrate and not on other surfaces such as dielectric surfaces. The plating solution includes metal ions and advantageously also includes dopant impurity ions. The pure metal or metal alloy film formed on the exposed silicon surfaces is then heat treated to form a metal silicide on the exposed silicon surfaces and to drive the dopant impurities to the interface formed between the exposed silicon surfaces and the metal silicide film.
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Citations
20 Claims
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1. A method for forming a semiconductor device comprising:
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providing a semiconductor substrate with a semiconductor device thereon, said semiconductor device having exposed silicon surfaces and exposed dielectric surfaces; positioning said semiconductor substrate in an electroless plating solution that includes at least metal ions therein, and urging a metal film of said metal ions to selectively deposit only on said exposed silicon surfaces and not on said dielectric surfaces. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method for forming a semiconductor device comprising:
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providing a semiconductor substrate with a semiconductor device thereon, said semiconductor device having exposed silicon surfaces and exposed dielectric surfaces; positioning said semiconductor substrate in an electroless plating solution that includes at least metal ions and dopant impurity ions therein; urging said metal ions to selectively deposit only on said exposed silicon surfaces and not on said dielectric surfaces thereby forming a metal film only on said exposed silicon surfaces; and heating to form a metal silicide by causing said metal film to react with silicon from said exposed silicon surfaces and causing said dopant impurity ions to become situated at an interface between said exposed silicon surfaces and said metal silicide. - View Dependent Claims (18)
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19. A method for forming a semiconductor device comprising:
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providing a semiconductor substrate with a semiconductor device thereon, said semiconductor device having at least exposed silicon surfaces; positioning said semiconductor substrate in an electroless plating solution that includes at least metal ions and dopant impurity ions therein; controlling conditions of said electroless plating solution to cause formation of a metal layer formed of said metal ions, on said silicon surface, said metal layer including said dopant impurity ions therein; and heating to cause reaction between said metal layer and said exposed silicon surfaces, thus forming a metal silicide film and further causing said dopant impurity ions to become institiated at an interface formed between said metal silicide film and said exposed silicon surfaces. - View Dependent Claims (20)
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Specification