SALICIDATION PROCESS USING ELECTROLESS PLATING TO DEPOSIT METAL AND INTRODUCE DOPANT IMPURITIES

• US 20090004851A1
• Filed: 06/29/2007
• Published: 01/01/2009
• Est. Priority Date: 06/29/2007
• Status: Abandoned Application

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Shue, Shau-Lin, Shih, Chien-Hsueh, Ko, Ting-Chu
• Application Number:
  US11/770,817
• Publication Number:
  US 20090004851A1
• Time in Patent Office: Days
• US Class Current: 438/660
• CPC Class Codes: H01L 21/2254 from or through or into an applied layer, e.g. photoresist, nitrides
• CPC Class Codes: H01L 21/28518 the conductive layers comprising silicides H01L21/28537 takes precedence
• CPC Class Codes: H01L 21/288 from a liquid, e.g. electrolytic deposition

Abstract

A selective electroless plating operation provides for the selective deposition of a metal film only on exposed silicon surfaces of a semiconductor substrate and not on other surfaces such as dielectric surfaces. The plating solution includes metal ions and advantageously also includes dopant impurity ions. The pure metal or metal alloy film formed on the exposed silicon surfaces is then heat treated to form a metal silicide on the exposed silicon surfaces and to drive the dopant impurities to the interface formed between the exposed silicon surfaces and the metal silicide film.

Claims

1. A method for forming a semiconductor device comprising:

providing a semiconductor substrate with a semiconductor device thereon, said semiconductor device having exposed silicon surfaces and exposed dielectric surfaces;

positioning said semiconductor substrate in an electroless plating solution that includes at least metal ions therein, and

urging a metal film of said metal ions to selectively deposit only on said exposed silicon surfaces and not on said dielectric surfaces.

2. The method as in claim 1, wherein said electroless plating solution further includes at least one dopant impurity therein, and wherein said metal film is an alloy including said at least one dopant impurity as a component thereof.

3. The method as in claim 2, wherein said dopant impurity comprises boron and further comprising:

heating to cause silicon from said exposed silicon surfaces to react with said metal film to form a metal silicide and to cause said boron to become situated at an interface between said exposed silicon surfaces and said metal silicide, said heating taking place after said urging.

4. The method as in claim 2, wherein said dopant impurity comprises phosphorus and further comprising:

heating to cause silicon from said exposed silicon surfaces to react with said metal film to form a metal silicide and to cause said phosphorus to become situated at an interface between said exposed silicon surfaces and said metal silicide, said heating taking place after said urging.

5. The method as in claim 2, wherein said dopant comprises tungsten.

6. The method as in claim 1, wherein said metal ions comprise nickel and further comprising, after said urging, heating to form NiSi on said exposed silicon surfaces.

7. The method as in claim 1, wherein said urging comprises controlling temperature, pH and chemical concentration of said electroless plating solution.

8. The method as in claim 1, wherein said urging comprises maintaining said electroless plating solution to have a temperature within a range of about 40-90°

C., a pH between about 4 and 9, and a concentration of said metal ions between about 0.05M (mole/L)-5M (mole/L).

9. The method as in claim 1, further comprising heating to form a metal silicide through combination of said metal film and said exposed silicon surfaces.

10. The method as in claim 9, further comprising further heating to change phase of said metal silicide.

11. The method as in claim 9, wherein said heating takes place directly following said urging.

12. The method as in claim 1, wherein said electroless plating solution further comprises a reducing agent at a concentration ranging between about 0.01M (mole/L) to about 1.0M (mole/L).

13. The method as in claim 1, further comprising carrying out a surface activation step after said providing and prior to said positioning, said surface activation step comprising a vet process including at least one of Pd²⁺, Pd nanoparticles, and Pt²⁺ as surface activators therein.

14. The method as in claim 1, wherein said metal film is deposited on said exposed silicon surfaces at a metal deposition rate within the range of about 20-200 A/min.

15. The method as in claim 1, wherein said metal ions comprise cobalt and further comprising, after said urging, heating to form CoSi on said exposed silicon surfaces.

16. The method as in claim 1, wherein said metal ions comprise one of titanium, platinum, molybdenum, ytterbium and erbium.

17. A method for forming a semiconductor device comprising:

providing a semiconductor substrate with a semiconductor device thereon, said semiconductor device having exposed silicon surfaces and exposed dielectric surfaces;

positioning said semiconductor substrate in an electroless plating solution that includes at least metal ions and dopant impurity ions therein;

urging said metal ions to selectively deposit only on said exposed silicon surfaces and not on said dielectric surfaces thereby forming a metal film only on said exposed silicon surfaces; and

heating to form a metal silicide by causing said metal film to react with silicon from said exposed silicon surfaces and causing said dopant impurity ions to become situated at an interface between said exposed silicon surfaces and said metal silicide.

18. The method as in claim 17, wherein said urging comprises controlling temperature, pH and chemical concentration of said electroless plating solution and further comprising further heating to cause a phase change of said metal silicide.

19. A method for forming a semiconductor device comprising:

providing a semiconductor substrate with a semiconductor device thereon, said semiconductor device having at least exposed silicon surfaces;

positioning said semiconductor substrate in an electroless plating solution that includes at least metal ions and dopant impurity ions therein;

controlling conditions of said electroless plating solution to cause formation of a metal layer formed of said metal ions, on said silicon surface, said metal layer including said dopant impurity ions therein; and

heating to cause reaction between said metal layer and said exposed silicon surfaces, thus forming a metal silicide film and further causing said dopant impurity ions to become institiated at an interface formed between said metal silicide film and said exposed silicon surfaces.

20. The method as in claim 19, wherein said electroless plating solution includes a nickel salt, hydrophosphite or dimethylamine borane as a reducing agent, citrate as a complexing agent, NH₃H and NaOH as a buffering agent and polyethylene glycol as a wetting agent.