HYBRID ETCH CHAMBER WITH DECOUPLED PLASMA CONTROLS
First Claim
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1. An etch plasma processing chamber for etching a substrate having a dielectric layer thereupon, comprisinga) a reactor vessel comprising non-conducting lateral wall, a ceiling, and a bottom closure comprising a wafer support device, said ceiling and said wafer support device defining a parallel plate reactor;
- b) a first RE power source providing RE energy to the support device at a frequency ω
pd sufficient to initiate and maintain a plasma of a process gas;
c) a second RE power source providing RF energy to the support device at a frequency ω
ion sufficient to control kinematical properties of ions generated in the plasma, wherein ω
ion <
ω
pd;
d) inductive windings situated about the non-conductive lateral wall of said reactor vessel; and
,e) a third RF power source providing RF energy to the inductive windings to inductively couple said third RF power source to said plasma.
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Abstract
A dielectric etch chamber and method for improved control of plasma parameters. The plasma chamber comprises dual-frequency bias source that capacitively couples the RF energy to the plasma, and a single or dual frequency source that inductively couples the RF energy to the plasma. The inductive source may be modulated for improved etch uniformity.
151 Citations
23 Claims
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1. An etch plasma processing chamber for etching a substrate having a dielectric layer thereupon, comprising
a) a reactor vessel comprising non-conducting lateral wall, a ceiling, and a bottom closure comprising a wafer support device, said ceiling and said wafer support device defining a parallel plate reactor; -
b) a first RE power source providing RE energy to the support device at a frequency ω
pd sufficient to initiate and maintain a plasma of a process gas;c) a second RE power source providing RF energy to the support device at a frequency ω
ion sufficient to control kinematical properties of ions generated in the plasma, wherein ω
ion <
ω
pd;d) inductive windings situated about the non-conductive lateral wall of said reactor vessel; and
,e) a third RF power source providing RF energy to the inductive windings to inductively couple said third RF power source to said plasma. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of operating a plasma reactor, comprising:
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a. introducing a workpiece into the reactor; b. introducing a process gas into the reactor, c. capacitively coupling high frequency RF energy into the reactor so as to initiate and maintain a process plasma within the reactor; d. capacitively coupling low frequency RF energy into the reactor so as to control ion energy of ions within the plasma; and
,e. inductively coupling RF energy into the reactor so to control neutrals flux within the plasma. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23)
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Specification