Semiconductor Device and Manufacturing Method Thereof
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Abstract
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
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Citations
62 Claims
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1-38. -38. (canceled)
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39. A semiconductor device comprising:
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a gate electrode over a substrate; an insulating film over the gate electrode; an oxide semiconductor film over the gate electrode with the insulating film interposed therebetween; a channel protective film formed over the oxide semiconductor film; a source electrode and a drain electrode formed over the oxide semiconductor film and the channel protective film; and a passivation film comprising an insulating material formed over at least the source electrode, the drain electrode, the channel protective film and the oxide semiconductor film, wherein the oxide semiconductor film comprises an In—
Ga—
Zn—
O based amorphous oxide semiconductor. - View Dependent Claims (40, 41, 42)
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43. A semiconductor device comprising:
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a gate electrode over a substrate; an insulating film over the gate electrode; an oxide semiconductor film over the gate electrode with the insulating film interposed therebetween; a channel protective film formed over the oxide semiconductor film; a source electrode and a drain electrode formed over the oxide semiconductor film and the channel protective film wherein each of the source electrode and the drain electrode comprises a titanium film in contact with an upper surface of the oxide semiconductor film; and a passivation film comprising an insulating material formed over at least the source electrode, the drain electrode, the channel protective film and the oxide semiconductor film. - View Dependent Claims (44, 45, 46, 47)
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48. A semiconductor device comprising:
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a gate electrode over a substrate; an insulating film over the gate electrode; an oxide semiconductor film over the gate electrode with the insulating film interposed therebetween; a source electrode and a drain electrode formed over the oxide semiconductor film; and a passivation film comprising an insulating material formed over at least the source electrode, the drain electrode and the oxide semiconductor film, wherein the passivation film is in direct contact with at least upper surfaces of the source electrode and the drain electrode and an upper surface of the oxide semiconductor film between the source electrode and the drain electrode, and wherein the oxide semiconductor film comprises an In—
Ga—
Zn—
O based amorphous oxide semiconductor. - View Dependent Claims (49, 50, 51)
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52. A semiconductor device comprising:
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a gate electrode over a substrate; an insulating film over the gate electrode; an oxide semiconductor film over the gate electrode with the insulating film interposed therebetween; a source electrode and a drain electrode formed over the oxide semiconductor film wherein each of the source electrode and the drain electrode comprises a titanium film in contact with an upper surface of the oxide semiconductor film; and a passivation film comprising an insulating material formed over at least the source electrode, the drain electrode, and the oxide semiconductor film, wherein the passivation film is in direct contact with at least upper surfaces of the source electrode and the drain electrode and an upper surface of the oxide semiconductor film between the source electrode and the drain electrode. - View Dependent Claims (53, 54, 55, 56)
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57. A semiconductor device comprising:
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a first gate electrode and a second gate electrode over a substrate wherein the first gate electrode and the second gate electrode are connected to each other; an insulating film over the first gate electrode and the second gate electrode; and an oxide semiconductor film over the first gate electrode and the second gate electrode with the insulating film interposed therebetween, a source electrode and a drain electrode formed over the oxide semiconductor film; and a passivation film comprising an insulating material formed over at least the source electrode, the drain electrode and the oxide semiconductor film, wherein the passivation film is in direct contact with at least upper surfaces of the source electrode and the drain electrode and an upper surface of the oxide semiconductor film between the source electrode and the drain electrode. - View Dependent Claims (58, 59)
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60. A semiconductor device comprising:
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a first gate electrode and a second gate electrode over a substrate wherein the first gate electrode and the second gate electrode are connected to each other; an insulating film over the first gate electrode and the second gate electrode; and an oxide semiconductor film over the first gate electrode and the second gate electrode with the insulating film interposed therebetween, a source electrode and a drain electrode formed over the oxide semiconductor film wherein each of the source electrode and the drain electrode comprises a titanium film in contact with the oxide semiconductor film and a second conductive film comprising aluminum or an aluminum alloy on the titanium film; and a passivation film comprising an insulating material formed over at least the source electrode, the drain electrode and the oxide semiconductor film, wherein the passivation film is in direct contact with at least upper surfaces of the source electrode and the drain electrode and an upper surface of the oxide semiconductor film between the source electrode and the drain electrode. - View Dependent Claims (61, 62)
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Specification