Semiconductor Light Emitting Device and Method for Fabricating the Same

• US 20090008668A1
• Filed: 07/02/2008
• Published: 01/08/2009
• Est. Priority Date: 07/03/2007
• Status: Active Grant

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: MATSUMURA, Hiroaki
• Granted Patent: US 8,410,510 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A semiconductor light emitting device, which includes: a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; a semiconductor light emitting portion having a light emitting layer which is disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; a first conductivity-type semiconductor side electrode connected to the first conductivity-type semiconductor layer; and a second conductivity-type semiconductor side electrode connected to the second conductivity-type semiconductor layer, wherein the second conductivity-type semiconductor side electrode is disposed separated from an insulator film covering the semiconductor light emitting portion by a separation area.

Claims

1. A semiconductor light emitting device, comprising:

a first conductivity-type semiconductor layer;

a second conductivity-type semiconductor layer;

a semiconductor light emitting portion having a light emitting layer which is disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer;

a first conductivity-type semiconductor side electrode connected to the first conductivity-type semiconductor layer; and

a second conductivity-type semiconductor side electrode connected to the second conductivity-type semiconductor layer,

wherein the second conductivity-type semiconductor side electrode is disposed separated from an insulator film covering the semiconductor light emitting portion by a separation area.

2. The semiconductor light emitting device according to claim 1,

wherein a continuous layer made of metal materials or alloy materials is disposed on outer sides of the second conductivity-type semiconductor side electrode and the insulator film;

and

wherein the separation area is formed of a space, or a layer made of the metal materials or the alloy materials is disposed in the separation area.

3. The semiconductor light emitting device according to claim 1,

wherein a substrate is disposed on the outer sides of the second conductivity-type semiconductor side electrode and the insulator film.

4. The semiconductor light emitting device according to claim 1,

wherein the light emitting portion is disposed between the first conductivity-type semiconductor side electrode and the second conductivity-type semiconductor side electrode, and the first conductivity-type semiconductor side electrode is disposed across the first conductivity-type semiconductor layer from the light emitting layer and the second conductivity-type semiconductor side electrode is disposed across the second conductivity-type semiconductor layer from the light emitting layer,

wherein the first conductivity-type semiconductor side electrode and the second conductivity-type semiconductor side electrode are alternately disposed in plane view of the semiconductor light emitting portion.

5. The semiconductor light emitting device according to claim 1,

wherein an area of the second conductivity-type semiconductor side electrode is larger than an area of the first conductivity-type semiconductor side electrode in plane view of the semiconductor light emitting portion.

6. The semiconductor light emitting device according to claim 1,

wherein the second conductivity-type semiconductor side electrode is made a light reflecting metal material.

7. The semiconductor light emitting device according to claim 6,

wherein the light reflecting metal material is at least one selected from a group of Ag, Al, and Rh.

8. A method for fabricating a semiconductor light emitting device, comprising steps of:

forming a semiconductor light emitting portion including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and a light emitting layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer;

forming a first conductivity-type semiconductor side electrode connected to the first conductivity-type semiconductor layer;

forming a second conductivity-type semiconductor side electrode connected to the second conductivity-type semiconductor layer; and

forming the second conductivity-type semiconductor side electrode to be separated from an insulator film covering the semiconductor light emitting portion by a separation area.