LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND LAMP

• US 20090008672A1
• Filed: 08/27/2008
• Published: 01/08/2009
• Est. Priority Date: 02/17/2006
• Status: Abandoned Application

• Current Assignee: Showa Denko KK
• Original Assignee: Showa Denko KK
• Inventors: FUKUNAGA, Naoki, OSAWA, Hiroshi
• Application Number:
  US12/199,746
• Publication Number:
  US 20090008672A1
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

There is provided a light-emitting device having high reliability and excellent light extraction efficiency, a manufacturing method thereof, and a lamp. A light-emitting device includes a transparent electrode, wherein a titanium oxide-based conductive film is used for at least one layer of said transparent electrode, an emission wavelength is within a range of 300 to 550 nm, and a photocatalytic reaction-prevention layer is formed so as to cover said titanium oxide-based conductive film.

Claims

1. A light-emitting device comprising a transparent electrode, wherein

a titanium oxide-based conductive film is used for at least one layer of said transparent electrode,

an emission wavelength is within a range of 300 to 550 nm, and

a photocatalytic reaction-prevention layer is formed so as to cover said titanium oxide-based conductive film.

2. The light-emitting device according to claim 1, wherein said titanium oxide-based conductive film is of an oxide comprising Ti and at least one element selected from the group consisting of Ta, Nb, V, Mo, W, and Sb.

3. The light-emitting device according to claim 1, which is sealed in a resin.

4. The light-emitting device according to claim 1, wherein said photocatalytic reaction-prevention layer is formed of a translucent material having a transmittance of 80% or more at a wavelength within a range of 300 to 550 nm.

5. The light-emitting device according to claim 4, wherein said photocatalytic reaction-prevention layer is formed of a material comprising at least one selected from the group consisting of silicon oxide, aluminum oxide, hafnium oxide, tantalum oxide, niobium oxide, silicon nitride, and aluminum nitride.

6. The light-emitting device according to claim 4, wherein said photocatalytic reaction-prevention layer is of a material comprising at least one selected from the group consisting of ITO (In₂O₃—

SnO₂), AZO (ZnO—

Al₂O₃), IZO (In₂O₃—

ZnO), and GZO (ZnO—

Ga₂O₃).

7. The light-emitting device according to claim 1, wherein the thickness of said photocatalytic reaction-prevention layer is within a range of 10 to 10,000 nm.

8. The light-emitting device according to claim 1, wherein the light-emitting device is a nitride-based semiconductor light-emitting device.

9. The light-emitting device according to claim 8, wherein said nitride-based semiconductor light-emitting device is a GaN-based semiconductor light-emitting device.

10. The light-emitting device according to claim 9, wherein the refractive indexes of said GaN-based semiconductor light-emitting device and said titanium oxide-based conductive film are equivalent or the difference therebetween is within 0.5.

11. The light-emitting device according to claim 1, wherein the surface of said titanium oxide-based conductive film is roughened to be in a concavo-convex shape.

15. A lamp produced by sealing the semiconductor light-emitting device according to claim 1 in a resin.

12. A method of manufacturing a light-emitting device comprising a transparent electrode, wherein a titanium oxide-based conductive film is used for at least one layer of said transparent electrode, and an emission wavelength is within a range of 300 to 550 nm,

the method comprising forming a photocatalytic reaction-prevention layer so as to cover said titanium oxide-based conductive film.

13. The method of manufacturing a light-emitting device according to claim 12, wherein said photocatalytic reaction-prevention layer is formed by a sputtering method or a CVD method.

14. The method of manufacturing a light-emitting device according to claim 13, wherein said photocatalytic reaction-prevention layer is formed by the CVD method using aluminum oxide.

16. A lamp produced by sealing a light-emitting device obtained by the manufacturing method according to claim 12 in a resin.