Semiconductor Light Emitting Device Member, Method for Manufacturing Such Semiconductor Light Emitting Device Member and Semiconductor Light Emitting Device Using Such Semiconductor Light Emitting Device Member

• US 20090008673A1
• Filed: 02/23/2006
• Published: 01/08/2009
• Est. Priority Date: 02/23/2005
• Status: Active Grant

• Current Assignee: Mitsubishi Chemical Corporation (Mitsubishi Chemical Group Corp.)
• Original Assignee: Mitsubishi Chemical Corporation (Mitsubishi Chemical Group Corp.)
• Inventors: Tomura, Tsubasa, Mori, Yutaka, Kobayashi, Hiroshi, Kato, Hanako
• Granted Patent: US 7,859,006 B2
• Time in Patent Office: Days
• US Class Current: 257/100
• CPC Class Codes: C08G 77/04 Polysiloxanes
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin

Abstract

A semiconductor light-emitting device member excellent in transparency, light resistance, and heat resistance and capable of sealing a semiconductor light-emitting device without causing cracks and peeling even after a long-time use is provided. Therefore, a semiconductor light-emitting device member that comprises (1) in a solid Si-nuclear magnetic resonance spectrum, at least one peak selected from a group consisting of (i) peaks whose peak top position is in an area of a chemical shift of −40 ppm to 0 ppm inclusive, and whose full width at half maximum is 0.3 ppm to 3.0 ppm inclusive, and (ii) peaks whose peak top position is in an area of the chemical shift of −80 ppm or more and less than −40 ppm, and whose full width at half maximum is 0.3 ppm to 5.0 ppm inclusive, wherein (2) silicon content is 20 weight % or more and (3) silanol content is 0.1 weight % to 10 weight % inclusive is used.

Claims

1. A semiconductor light-emitting device member, wherein

(1) in a solid Si-nuclear magnetic resonance spectrum, the semiconductor light-emitting device member comprises at least one peak selected from a group consisting of

(i) peaks whose peak top position is in an area of a chemical shift of −

40 ppm or more and 0 ppm or less, and whose full width at half maximum is 0.3 ppm or more and 3.0 ppm or less, and

(ii) peaks whose peak top position is in an area of the chemical shift of −

80 ppm or more and less than −

40 ppm, and whose full width at half maximum is 0.3 ppm or more and 5.0 ppm or less,

(2) silicon content is 20 weight % or more, and

(3) silanol content is 0.1 weight % or more and 10 weight % or less.

2. The semiconductor light-emitting device member according to claim 1, wherein

(4) a hardness measured value (Shore A) by durometer type A is 5 or more and 90 or less.

3. The semiconductor light-emitting device member according to claim 2, wherein

a ratio of (total area of peaks of the chemical shift of −

40 ppm or more and 0 ppm or less)/(total area of peaks of the chemical shift of less than −

40 ppm) in the solid Si-nuclear magnetic resonance spectrum is 3 or more and 200 or less.

4. The semiconductor light-emitting device member according to any one of claims 1 to 3, comprising:

a plurality of peaks selected from the group consisting of (i) and (ii).

5. The semiconductor light-emitting device member according to any one of claims 1 to 4, wherein

light transmittance on a luminous wavelength of the semiconductor light-emitting device with a film thickness of 0.5 mm is 80% or more.

6. The semiconductor light-emitting device member according to any one of claims 1 to 5, further comprising:

inorganic oxide particles.

13. A manufacturing method of the semiconductor light-emitting device member according to any one of claims 1 to 6, comprising:

a process of drying a condensation polymer obtained by performing hydrolysis and polycondensation of a compound represented by the following formula (1) and/or an oligomer thereof

[Chemical Formula 3]

M^m+X_nY¹<sub>m−

n</sub> 

 

(1)

wherein

M represents at least one element selected from silicon, aluminum, zirconium, and titanium,

X represents a hydrolyzable group,

Y¹ represents a monovalent organic group,

m represents an integer of 1 or greater representing a valence of M, and

n represents an integer of 1 or greater representing a number of X groups, where m≧

n

14. A manufacturing method of the semiconductor light-emitting device member according to any one of claims 1 to 6, comprising:

a process of drying a condensation polymer obtained by performing hydrolysis and polycondensation of a compound represented by the following formula (2) and/or an oligomer thereof.

[Chemical Formula 4]

(M^s+X_tY¹<sub>s−

t−

1</sub>)_uY² 

 

(2)

wherein

M represents at least one element selected from silicon, aluminum, zirconium, and titanium,

X represents a hydrolyzable group,

Y¹ represents a monovalent organic group,

Y² represents a u-valent organic group,

s represents an integer of 2 or greater representing a valence of M,

t represents an integer of 1 or greater and s-1 or smaller, and

u represents an integer of 2 or greater.

15. The manufacturing method of the semiconductor light-emitting device member according to claim 13 or 14, wherein

the hydrolysis and polycondensation are performed in the presence of a solvent and

the process of drying the resultant condensation polymer has a first drying process in which a liquid condensation polymer is obtained by substantially removing the solvent at a temperature equal to or below a boiling point of the solvent and a second drying process in which the condensation polymer is dried at the temperature equal to or above the boiling point of the solvent.

16. The manufacturing method of the semiconductor light-emitting device member according to claim 13 or 14, wherein

the hydrolysis and polycondensation are performed in the presence of a solvent and

a process of distilling off the solvent from the condensation polymer before the condensation polymer is dried is provided.

20. The manufacturing method of the semiconductor light-emitting device member according to any one of claims 13, 14, and 17 to 19, wherein

the hydrolysis and polycondensation are performed in the presence of a solvent and

the process of drying the resultant condensation polymer has a first drying process in which the solvent is substantially removed at a temperature below a boiling point of the solvent and a second drying process in which the condensation polymer is dried at the temperature equal to or above the boiling point of the solvent.

21. The manufacturing method of the semiconductor light-emitting device member according to any one of claims 13 to 20, wherein

a ratio of hydrolysis is 80% or more and 500% or less.

22. The manufacturing method of the semiconductor light-emitting device member according to any one of claims 13 to 21, wherein

the hydrolysis and polycondensation are performed in the presence of an organometallic compound catalyst.

23. A semiconductor light-emitting device comprising at least the semiconductor light-emitting device member according to any one of claims 1 to 12.

7. A semiconductor light-emitting device member, wherein

(5) in a solid Si-nuclear magnetic resonance spectrum,

(iii) the semiconductor light-emitting device member comprises a plurality of peaks whose peak top position is in an area of a chemical shift of −

80 ppm or more, and

(iv) a molar ratio of silicon corresponding to D² cyclic compound in trimers and tetramers to a total of silicon is 5% or more and 30% or less,

(2) silicon content is 20 weight % or more, and

(6) a weight loss rate when 150°

C. and a degree of vacuum 6.0 Pa are reached is 3% or less.

8. The semiconductor light-emitting device member according to claim 7, wherein

light transmittance on a luminous wavelength of the semiconductor light-emitting device with a film thickness of 0.5 mm is 80% or more.

9. The semiconductor light-emitting device member according to claim 7 or 8, further comprising:

inorganic oxide particles.

17. A manufacturing method of the semiconductor light-emitting device member according to any one of claims 7 to 9, comprising:

a process of drying a condensation polymer obtained by performing hydrolysis and polycondensation of a compound represented by the following formula (1) and/or anoligomer thereof.

[Chemical Formula 5]

M^m+X_nY¹<sub>m−

n</sub> 

 

(1)

wherein

M represents at least one element selected from silicon, aluminum, zirconium, and titanium,

X represents a hydrolyzable group,

Y¹ represents a monovalent organic group,

m represents an integer of 1 or greater representing a valence of M, and

n represents an integer of 1 or greater representing a number of X groups, where m≧

n.

18. A manufacturing method of the semiconductor light-emitting device member according to any one of claims 7 to 9, comprising:

a process of drying a condensation polymer obtained by performing hydrolysis and polycondensation of a compound represented by the following formula (2) and/or an oligomer thereof.

[Chemical Formula 6]

(M^s+X_tY¹<sub>s−

t−

1</sub>)_uY² 

 

(2)

wherein

M represents at least one element selected from silicon, aluminum, zirconium, and titanium,

X represents a hydrolyzable group,

Y¹ represents a monovalent organic group,

Y² represents a u-valent organic group,

s represents an integer of 2 or greater representing a valence of M,

t represents an integer of 1 or greater and s-1 or smaller, and

u represents an integer of 2 or greater.

10. A semiconductor light-emitting device member obtained through a process of drying a condensation polymer obtained by performing hydrolysis and polycondensation of a compound represented by at least one of the following formulas (1) and (2) and/or an oligomer thereof, wherein

(7) a molar ratio of silicon corresponding to Dⁿ compounds to a total of silicon is 30% or more in a solid Si-nuclear magnetic resonance spectrum,

(8) a total molar ratio of silicon corresponding to D² cyclic compound in trimers and tetramers to a total of silicon is 0.1% or more and 15% or less in the solid Si-nuclear magnetic resonance spectrum, and

(2) silicon content is 20 weight % or more.

[Chemical Formula 1]

M^m+X_nY¹_m−

n 

 

(1)

wherein

M represents at least one element selected from silicon, aluminum, zirconium, and titanium,

X represents a hydrolyzable group,

Y¹ represents a monovalent organic group,

m represents an integer of 1 or greater representing a valence of M, and

n represents an integer of 1 or greater representing a number of X groups, where m≧

n.

[Chemical Formula 2]

(M^s+X_tY¹<sub>s−

t−

1</sub>)_uY² 

 

(2)

wherein

M represents at least one element selected from silicon, aluminum, zirconium, and titanium,

X represents a hydrolyzable group,

Y¹ represents a monovalent organic group,

Y² represents a u-valent organic group,

s represents an integer of 2 or greater representing the valence of M,

t represents an integer of 1 or greater and s-1 or smaller, and

u represents an integer of 2 or greater.

11. The semiconductor light-emitting device member according to claim 10, wherein

light transmittance on a luminous wavelength of the semiconductor light-emitting device with a film thickness of 0.5 mm is 80% or more.

12. The semiconductor light-emitting device member according to claim 10 or 11, further comprising:

inorganic oxide particles.

19. A manufacturing method of a semiconductor light-emitting device member in which

(7) a molar ratio of silicon corresponding to Dⁿ compounds to a total of silicon is 30% or more in a solid Si-nuclear magnetic resonance spectrum,

(8) a total molar ratio of silicon corresponding to D² cyclic compound in trimers and tetramers to a total of silicon is 0.1% or more and 15% or less in the solid Si-nuclear magnetic resonance spectrum, and

(2) silicon content is 20 weight % or more;

comprising;

a process of drying a condensation polymer obtained by performing hydrolysis and polycondensation of a compound represented by at least one of the following formulas (1) and (2) and/or an oligomer thereof.

[Chemical Formula 7]

M^m+X_nY¹<sub>m−

n</sub> 

 

(1)

wherein

M represents at least one element selected from silicon, aluminum, zirconium, and titanium,

X represents a hydrolyzable group,

Y¹ represents a monovalent organic group,

m represents an integer of 1 or greater representing a valence of M, and

n represents an integer of 1 or greater representing a number of X groups, where m≧

n.

[Chemical Formula 8]

(M^s+X_tY¹<sub>s−

t−

1</sub>)_uY² 

 

(2)

wherein

M represents at least one element selected from silicon, aluminum, zirconium, and titanium,

X represents a hydrolyzable group,

Y¹ represents a monovalent organic group,

Y² represents a u-valent organic group,

s represents an integer of 2 or greater representing the valence of M,

t represents an integer of 1 or greater and s-1 or smaller and

u represents an integer of 2 or greater.

24. A semiconductor light-emitting device member, comprising:

a functional group capable of forming a hydrogen bond with a hydroxyl group or oxygen in metalloxane bond present on a ceramic or metal surface, wherein

a maintenance rate of transmittance of light on a wavelength of 405 nm before and after leaving alone at temperature 200°

C. for about 500 hours is 80% or more and 110% or less, and

the maintenance rate of transmittance of light on the wavelength of 405 nm before and after irradiation with light having a center wavelength of 380 nm and radiant intensity of 0.4 kW/m² for about 72 hours is 80% or more and 110% or less.