SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

• US 20090008724A1
• Filed: 08/06/2008
• Published: 01/08/2009
• Est. Priority Date: 02/07/2006
• Status: Abandoned Application

• Current Assignee: Fujitsu Semiconductor Limited (Fujitsu Limited)
• Original Assignee: Fujitsu Limited
• Inventors: MISHIMA, Yasuyoshi, YAMAGUCHI, Masaomi
• Application Number:
  US12/187,050
• Publication Number:
  US 20090008724A1
• Time in Patent Office: Days
• US Class Current: 257/410
• CPC Class Codes: H01L 21/28194 by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition H01L21/28202 takes precedence
• CPC Class Codes: H01L 21/823842 gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
• CPC Class Codes: H01L 21/823857 with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
• CPC Class Codes: H01L 29/513 the variation being perpendicular to the channel plane
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence

Abstract

The semiconductor device according to the present invention comprises a gate insulating film 16 formed on a silicon substrate 10 and including a silicon oxide film 12 and a Hf-based high dielectric constant insulating film 14 doped with Al; a gate electrode 18 of a polysilicon film formed on the gate insulating film 16; and a sidewall insulating film 20 formed on the side walls of the gate electrode 18 and the Hf-based high dielectric constant insulating film 14, and the maximum value of the depth-wise concentration distribution of the Al doped in the Hf-based high dielectric constant insulating film 14 is 1×10²¹-4×10²¹ atoms/cm³.

Claims

1. A semiconductor device comprising:

a gate insulating film formed over a semiconductor substrate and including an Hf-based insulating film doped with at least one kind of metal selected out of a group of Al, Cr, Ti and Y; and

a gate electrode formed over the gate insulating film,

a depth-wise concentration distribution of the metal doped in the Hf-based insulating film having the maximum value of 1×

10²¹ atoms/cm³-4×

10²¹ atoms/cm³.

2. The semiconductor device according to claim 1, wherein

the gate electrode is formed of a conductive film containing Si.

3. The semiconductor device according to claim 2, wherein

the gate electrode includes a polycrystal silicon film, a polycrystal silicon germanium film or a silicide film.

4. The semiconductor device according to claim 1, wherein

the gate electrode includes a gelicide film.

5. A method of manufacturing a semiconductor device comprising:

forming an Hf-based insulating film over a semiconductor substrate;

doping at least one kind of metal selected out of a group of Al, Cr, Ti and Y in the Hf-based insulating film so that the maximum value of a depth wide concentration distribution of the metal doped in the Hf-based insulating film is 1×

10²¹ atoms/cm³-4×

10²¹ atoms/cm³; and

forming a gate electrode over the Hf-based insulating film.

6. The method of manufacturing a semiconductor device according to claim 5, wherein

in doping the metal in the Hf-based insulating film, a surface of the Hf-based insulating film is exposed to a gas of an organic metal compound containing the metal to thereby dope the metal in the Hf-based insulating film.

7. The method of manufacturing a semiconductor device according to claim 5, further comprising after doping the metal in the Hf-based insulating film and before forming the gate electrode,

making thermal processing densifying the Hf-based insulating film.

8. The method of manufacturing a semiconductor device according to claim 6, further comprising after doping the metal in the Hf-based insulating film and before forming the gate electrode,

making thermal processing densifying the Hf-based insulating film.

9. The method of manufacturing a semiconductor device according to claim 5, further comprising after forming the Hf-based insulating film and before doping the meal in the Hf-based insulating film,

making thermal processing densifying the Hf-based insulating film.

10. The method of manufacturing a semiconductor device according to claim 6, further comprising after forming the Hf-based insulating film and before doping the meal in the Hf-based insulating film,

making thermal processing densifying the Hf-based insulating film.