Semiconductor device and manufacturing method of the same
First Claim
1. A semiconductor device comprising:
- a sensor element having a plate shape with a surface and including a sensor structure disposed in a surface portion of the sensor element; and
a plate-shaped cap element bonded to the surface of the sensor element, wherein;
the cap element has a wiring pattern portion facing the sensor element; and
the wiring pattern portion connects an outer periphery of the surface of the sensor element and the sensor structure so that the sensor structure is electrically coupled with an external element via the outer periphery.
1 Assignment
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Accused Products
Abstract
A semiconductor device includes: a sensor element having a plate shape with a surface and including a sensor structure disposed in a surface portion of the sensor element; and a plate-shaped cap element bonded to the surface of the sensor element. The cap element has a wiring pattern portion facing the sensor element. The wiring pattern portion connects an outer periphery of the surface of the sensor element and the sensor structure so that the sensor structure is electrically coupled with an external element via the outer periphery. The sensor element does not have a complicated multi-layered structure, so that the sensor element is simplified. Further, the dimensions of the device are reduced.
44 Citations
22 Claims
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1. A semiconductor device comprising:
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a sensor element having a plate shape with a surface and including a sensor structure disposed in a surface portion of the sensor element; and a plate-shaped cap element bonded to the surface of the sensor element, wherein; the cap element has a wiring pattern portion facing the sensor element; and the wiring pattern portion connects an outer periphery of the surface of the sensor element and the sensor structure so that the sensor structure is electrically coupled with an external element via the outer periphery. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A semiconductor device comprising:
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a first chip having a plate shape with a first surface and including a first IC circuit portion, which is disposed in a first surface portion of the first chip; and a second chip having a plate shape with a second surface and including a second IC circuit portion, which is disposed in a second surface portion of the second chip, wherein; the first chip further includes a first wiring pattern portion comprising a first insulating film, a first wiring layer, a second insulating film and a second wiring layer; the first insulating film is disposed on the first IC circuit portion; the first wiring layer is patterned on the first insulating film and coupled with the first IC circuit portion; the second insulating film is disposed on the first wiring layer; the second insulating film has a first opening so that the first wiring layer is exposed from the second insulating film via the first opening; the second wiring layer is disposed on the first wiring layer exposed in the first opening; the second chip includes a second wiring pattern portion comprising a third insulating film, a third wiring layer, a fourth insulating film and a fourth wiring layer; the third insulating film is disposed on the second IC circuit portion; the third wiring layer is patterned on the third insulating film and coupled with the second IC circuit portion; the fourth insulating film is disposed on the third wiring layer; the fourth insulating film has a second opening so that the third wiring layer is exposed from the fourth insulating film via the second opening; the fourth wiring layer is disposed on the third wiring layer exposed from the second opening; the surface of the first chip faces the surface of the second chip; and the second wiring layer of the first wiring pattern portion of the first chip and the fourth wiring layer of the second wiring pattern portion of the second chip are bonded to each other. - View Dependent Claims (17)
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18. A method for manufacturing a semiconductor device, the method comprising:
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preparing a sensor element having a plate shape with a surface, and forming a sensor structure in a surface portion of the sensor element; preparing a plate-shaped cap element having a wiring pattern portion, and patterning the wiring pattern portion to bond with the sensor element in such a manner that an outer periphery of the surface of the sensor element is connected to the sensor structure with the wiring pattern portion; and bonding the cap element and the sensor element to connect the wiring pattern portion to the sensor structure. - View Dependent Claims (20, 21)
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19. A method for manufacturing semiconductor devices, the method comprising:
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preparing a sensor wafer having a plurality of sensor elements, each of which has a plate shape with a surface, and forming a sensor structure in a surface portion of each sensor element; preparing a cap wafer having a plurality of plate-shaped cap elements, each of which has a wiring pattern portion to be bonded to a respective sensor element, and patterning each of the wiring pattern portions to connect an outer periphery of a respective sensor element and a respective sensor structure; bonding the sensor wafer and the cap wafer to connect each wiring pattern portion to a respective sensor structure; and dividing the cap wafer and the sensor wafer into a plurality of sensor chips.
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22. A method for manufacturing a semiconductor device, the method comprising:
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preparing a first chip having a plate shape with a surface, forming a first IC circuit portion in a surface portion of the first chip, and forming a first wiring pattern portion on the first IC circuit portion, the first wiring pattern portion comprising a first insulating film, a first wiring layer, a second insulating film and a second wiring layer, wherein the first insulating film is formed on the first IC circuit portion, the first wiring layer is patterned on the first insulating film to be connected to the first IC circuit portion, the second insulating film is formed on the first wiring layer and has a first opening to expose the first wiring layer via the first opening, and the second wiring layer is formed on the first wiring layer exposed from the second insulating film via the opening; preparing a second chip having a plate shape with a surface, forming a second IC circuit portion in a surface portion of the second chip, and forming a second wiring pattern portion on the second IC circuit portion, the second wiring pattern portion comprising a third insulating film, a third wiring layer, a fourth insulating film and a fourth wiring layer, wherein the third insulating film is formed on the second IC circuit portion, the third wiring layer is patterned on the third insulating film to be connected to the second IC circuit portion, the fourth insulating film is formed on the third wiring layer and has a second opening to expose the third wiring layer via the second opening, and the fourth wiring layer is formed on the third wiring layer exposed from the fourth insulating film via the second opening; and facing the surface of the first chip and the surface of the second chip, and bonding the second wiring layer of the first wiring pattern portion of the first chip and the fourth wiring layer of the second wiring pattern portion of the second chip.
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Specification