SEMICONDUCTOR LIGHT RECEIVING DEVICE AND PHOTOSEMICONDUCTOR MODULE

• US 20090008734A1
• Filed: 06/30/2008
• Published: 01/08/2009
• Est. Priority Date: 06/29/2007
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: FURUYAMA, Hideto
• Application Number:
  US12/164,502
• Publication Number:
  US 20090008734A1
• Time in Patent Office: Days
• US Class Current: 257/435
• CPC Class Codes: H01L 31/0203 Containers; Encapsulations , e.g. encapsulation of photodiodesfor photovoltaic devices H01L31/048; for organic photosensitive devices H10K30/80

Abstract

A semiconductor light receiving device includes: a light receiving section made of a semiconductor provided on a substrate; a mask layer provided above the light receiving section and having an opening configured to limit an irradiation area of the light receiving section; and a light scattering section provided in at least part of a light incident path in the opening and including a transparent material and light scattering particles dispersed in the transparent material. Light incident on the light receiving section passes through the light scattering section before being incident on the light receiving section.

Claims

1. A semiconductor light receiving device comprising:

a light receiving section made of a semiconductor provided on a substrate;

a mask layer provided above the light receiving section and having an opening configured to limit an irradiation area of the light receiving section; and

a light scattering section provided in at least part of a light incident path in the opening and including a transparent material and light scattering particles dispersed in the transparent material,

light incident on the light receiving section passing through the light scattering section before being incident on the light receiving section.

2. The semiconductor light receiving device according to claim 1, wherein the opening expands upward.

3. The semiconductor light receiving device according to claim 1, wherein an inner wall of the opening is covered by a light reflecting film.

4. The semiconductor light receiving device according to claim 2, wherein the light scattering section partly occupy the opening at a nearer part of the opening.

5. The semiconductor light receiving device according to claim 1, wherein the light scattering section partly occupy the opening at middle part of the opening.

6. The semiconductor light receiving device according to claim 5, wherein transparent material is provided on both sides of the light scattering section in the opening.

7. The semiconductor light receiving device according to claim 1, wherein the light scattering section has a sidewall covered with a light reflecting film.

8. The semiconductor light receiving device according to claim 1, wherein the opening expands upwards the opening has a surface covered with a light reflecting film, and at least part of the light scattering section is formed inside the upward expanding region of the opening.

9. The semiconductor light receiving device according to claim 1, wherein an inner wall of the opening is substantially vertical.

10. The semiconductor light receiving device according to claim 8, wherein the opening includes a focusing section made of a transparent resin and the light scattering section combined in multiple stages.

11. The semiconductor light receiving device according to claim 1, further comprising a stopper layer made of opaque material and having an opening configured to limit an irradiation area of the light receiving section between the light receiving section and the mask layer,

the opening in the mask layer being larger than the opening in the stopper layer.

12. The semiconductor light receiving device according to claim 11, wherein the inner wall of the opening in the mask layer is covered with a light reflecting film.

13. The semiconductor light receiving device according to claim 12, wherein the surface of the stopper layer exposed to bottom of the opening in the mask layer is covered with the light reflecting film.

14. A semiconductor light receiving device comprising:

a light receiving section made of a semiconductor provided on a substrate;

a mask layer provided above the light receiving section and having an opening configured to limit an irradiation area of the light receiving section; and

a light scattering section provided on the mask layer configured to cover the opening, including a transparent material and light scattering particles dispersed in the transparent material and allowing at least part of incident light from an upper surface to be incident on the light receiving section.

15. The semiconductor light receiving device according to claim 14, wherein the light scattering section has a substantially vertical side wall.

16. The semiconductor light receiving device according to claim 14, wherein the light scattering section has a sidewall covered with a light reflecting film.

17. The semiconductor light receiving device according to claim 14, wherein a thickness of the light scattering section is larger than a thickness of the mask layer.

18. A photosemiconductor module comprising:

a semiconductor light receiving device; and

one of an optical fiber and an optical waveguide with its light emitting end facing the upper surface of the light scattering section,

the semiconductor light receiving device including;

a light receiving section made of a semiconductor provided on a substrate;

a mask layer provided above the light receiving section and having an opening configured to limit an irradiation area of the light receiving section; and

a light scattering section provided in at least part of a light incident path in the opening and including a transparent material and light scattering particles dispersed in the transparent material,

light incident on the light receiving section passing through the light scattering section before being incident on the light receiving section.

19. The photosemiconductor module according to claim 18, wherein the optical fiber is a multi-mode fiber.

20. The photosemiconductor module according to claim 18, further comprising:

a transparent resin filling a gap between the light incident surface of the light scattering section and the light emitting end of the optical fiber or the optical waveguide.